Rensselaer Polytechnic Institute

Polyset Company, Inc.

Pei-I Wang

Toh-Ming Lu

Shyam P Murarka

Ramkrishna Ghoshal

Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.

Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration

Semiconductor devices employing siloxane epoxy polymers as low-&#x3ba; dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400&#xb0; C. making them particularly attractive for use in the semiconductor industry

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Troy, NY, United States of America

Pei-I Wang