Lsi Logic Corporation

Luminescent Technologies, Inc.

Other

Hewlett-packard Development Company, L.P.

Hewlett-packard Company

Paul Rissman

Sheldon Aronowitz

Vladimir Zubkov

Richard D Schinella

Danping Peng

Daniel S Abrams

Geraint Owen

James Bernard Kruger

J Leon Shohet

Yong Liu

Timothy Lin

Andrew J Moore

Bennett W Olson

Robert P Gleason

A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.

Mask patterns for use in multiple-exposure lithography

A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.

Mask-patterns including intentional breaks

Embodiments of the invention include a method for forming alternating aperture phase-shift masks. An optically transparent substrate suitable for having a pattern of phase-shift regions formed thereon is provided. Alternatively, an opaque pattern is formed on the optically transparent substrate, the opaque pattern defining a pattern of phase-shift regions on the substrate. The phase shift regions are then ion implanted to damage the phase-shift regions. The damage penetrates to a predetermined depth and forms damaged regions that can be more easily etched than the adjacent undamaged portions of the substrate. The damaged portions define a final profile for phase shift recesses to be formed in the substrate. After implantation, substrate material is removed from the damaged phase-shift regions so that recesses are formed therein. The recesses are formed having a depth that corresponds to the depth of the damage caused in the phase-shift regions by the ion implantation.

Alternating aperture phase-shift mask fabrication method

Self-aligned alloy capping layers for copper interconnect structures

Method for creating self-aligned alloy capping layers for copper interconnect structures

A system and method utilize a digital camera-ready printer which can print directly from a variety of conventional digital cameras on the market. The digital camera-ready printer includes a camera interface that can link with a digital camera in different modes to transfer frames of digital image data from the digital cameras to the digital camera-ready printer. Preferably, the camera interface includes a hot shoe receptor to establish a convenient hot shoe link between the digital camera and the digital camera-ready printer. The digital camera-ready printer includes a processor that can identify the coupled digital camera in order to instruct the digital camera to transmit the frames of digital image data. The processor can also convert the format of the digital image data to a predetermined image file format. The processor of the digital camera-ready printer along with a display device allows a user to edit and manipulate an electronic image represented by a single frame of digital image data prior to printing.

Digital camera-ready printer

A method and apparatus for forming a buried insulator layer, typically a silicon dioxide layer, includes using plasma source ion implantation to uniformly implant ions into exposed regions of a semiconductor wafer. A silicon-on-insulator (SOI) structure is formed by an anneal step before fabricating an integrated circuit into the thin semiconductor layer above the buried insulator layer.

Forming a buried insulator layer using plasma source ion implantation

In electron beam lithography, a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.

Electron beam proximity effect correction by reverse field pattern

Growing community of inventors

Palo Alto, CA, United States of America

Paul Rissman