Tokyo Electron Limited

Paul Moroz

Eric J Strang

Lee Chen

Andrej Mitrovic

Steven T Fink

William Dale Jones

Maolin Long

Thomas Hamelin

A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.

Electron beam enhanced surface wave plasma source

A radial line slot antenna (RLSA) is described for generating plasma during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma.

Radial line slot antenna having a conductive layer

An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condition, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Method and system for arc suppression in a plasma processing system

A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Plasma chamber wall segment temperature control

An apparatus and a method for controlling the temperature of a substrate during substrate processing. The apparatus comprises a substrate table having a thermal surface supporting the substrate. The apparatus also comprises a first thermal assembly arranged in the substrate table and comprising a plurality of thermoelectric modules, each of the plurality of thermoelectric modules having a thermoelectric surfaces such that the plurality of thermoelectric modules defines a plurality of thermoelectric surfaces. In this apparatus, the plurality of thermoelectric surfaces is in thermal communication with the thermal surface and includes various shapes of thermoelectric surfaces, and the plurality of thermoelectric surfaces is configured to substantially completely underlie the thermal surface. The method comprises controlling a temperature of the thermal surface with a plurality of thermoelectric modules, the plurality of thermoelectric modules defining a plurality of thermoelectric surfaces and the plurality of thermoelectric surfaces including various shapes of thermoelectric surfaces.

Method and apparatus for rapid temperature change and control

The present invention presents a method and apparatus for reducing charging damage to a substrate is described. In particular, a method of operating a plasma processing system is described that leads to the removal of, or significant reduction of, the accumulated charge on the substrate.

Method and apparatus for reducing substrate charging damage

An apparatus determines how well a semiconductor wafer () is clamped to a support member (). The apparatus has at least one ultrasonic transducer () configured to emit ultrasonic energy () toward an interface between the water () and the support member () so that the interface generates echo signals, and a data processing unit () configured to analyze the echo signals to arrive at a determination as to how well the semiconductor wafer () is clamped to the support member (before semiconductor process is started. A first method ensures that a wafer () is securely clamped to a support member before a semiconductor process is started. A second method verifies proper de-clamping of a semiconductor wafer () from a support member () before the semiconductor wafer () is removed from the support member () upon completion of a semiconductor process.

Apparatus and method for determining clamping status of semiconductor wafer

A substrate holder for supporting a substrate, including an exterior supporting surface, a cooling component, a heating component positioned adjacent to the supporting surface and between the supporting surface and the cooling component, and a contact volume positioned between the heating component and the cooling component, and formed by a first internal surface and a second internal surface. The thermal conductivity between the heating component and the cooling component is increased when the contact volume is provided with a fluid.

Method and apparatus for efficient temperature control using a contact volume

A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.

Plasma processing apparatus for spatial control of dissociation and ionization

The inductively coupled plasma source and antenna geometry are significant factors in determining plasma and process uniformity inside the chamber. Growing demands for processing larger and larger wafers or LCD substrates and providing higher and higher degrees of plasma uniformity challenge the current ICP type antenna designs and push development of sources. Branching RF antenna, featuring a plurality of major and minor branches, provides improved coverage of processing area, reduced standing wave effect, improved uniformity of inductively coupled electromagnetic field, more uniform plasma production, and more homogeneous processing conditions throughout the whole processing area.

Branching RF antennas and plasma processing apparatus

A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region. The method further includes introducing a first process gas into the first injection region via a first inlet, and introducing a second process gas into the second injection region via a second inlet. The chamber has a wall encircling the first inlet, such that the wall has a terminal end including the second inlet.

Growing community of inventors

Marblehead, MA, United States of America

Paul Moroz