Cabot Microelectronics Corporation

International Business Machines Corporation

Other

Paul M Feeney

Jeffrey Dysard

Sriram Anjur

Eric Jeffrey White

Robert Michael Geffken

Vlasta A Brusic

Anthony K Stamper

David V Horak

Timothy Charles Krywanczyk

Lawrence D David

Brian L Mueller

Matthew J Rutten

Matthew T Tiersch

Timothy P Johns

Yun-Biao Xin

Li Wang

Daniel C Edelstein

John J Ellis-Monaghan

Kenneth Parker Rodbell

Donald Francis Canaperi

Naftali Eliahu Lustig

Mahadevaiyer Krishnan

Howard Smith Landis

Michael F Lofaro

William J Cote

Rosemary A Previti-Kelly

Kevin J Moeggenborg

Jonathan Daniel Chapple-Sokol

Mark A Jaso

Joyce C Liu

William L Guthrie

Frank Benjamin Kaufman

Isaac K Cherian

David Schroeder

Renjie Zhou

Philip Murphy

Jeffrey P Chamberlain

Mark P Murray

Bette L Bergman Reuter

Sally J Yankee

Christopher Thompson

James A Dirksen

Gregory H Bogush

Peter D Roper

Julie Pomerantz

Susan G Bombardier

Alicia Walters

David B Thompson

Alicia F Francis

Timothy Johns

The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

Compositions for polishing aluminum/copper and titanium in damascene structures

The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.

Polishing composition containing polyether amine

The invention relates to a method of polishing a substrate comprising at least one metal layer by applying an electrochemical potential between the substrate and at least one electrode in contact with a polishing composition comprising a reducing agent or an oxidizing agent.

Controlled electrochemical polishing method

The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.

Compositions and methods for CMP of phase change alloys

The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter Dwherein the mean particle diameter of the particles satisfies the equation: D&#x3e;W. The invention further provides a method of preparing the chemical-mechanical polishing composition.

Composition and method for damascene CMP

The invention provides a method of reducing in-trench smearing during polishing. The method comprises providing a substrate comprising a first layer comprising an insulating material, a second layer comprising a filling material, and a plurality of field and trench regions. A polymeric material is infiltrated over the substrate, wherein the polymeric material fills the trench regions and covers the field regions. The polymeric material optionally is removed from the field regions, followed by baking of the substrate such that the polymeric material in the trench regions becomes recessed below the insulating material of the field regions. The substrate is then subjected to a temperature of about 100&#xb0; C. or more for about 30 minutes or longer, such that during polishing of the substrate, smearing of the filling material in the trench regions is reduced as compared to polishing of the substrate under the same conditions except for subjecting the substrate to the temperature of about 100&#xb0; C. or more for about 30 minutes or longer. When desirable, a layer of additional material can be deposited over the polymeric material such that it forms a layer over the polymeric material in the trench regions and the filling material in the field regions. The substrate is then polished to obtain a substantially planar surface.

Method of reducing in-trench smearing during polishing

The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.

Preequilibrium polishing method and system

Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.

Chemical-mechanical planarization of metallurgy

A method of reducing the planarization defects produced during the manufacture of semiconductor devices. A sacrificial layer, having defects produced during a interconnection feature planarization step, is removed prior to the formation of subsequent layers to reduce the replication of unwanted defects.

Method of reducing planarization defects

A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.

Method and structure of column interconnect

A method and structure is described which improves the manufacturability of integrated circuit interconnect and stud contacts in contact with semiconductor substrates and upper levels of metallization. The monolithic structure is formed from a thick layer of refractory metal. A variation in the monolithic structure is in the use of a dual damascene local interconnect portion of the structure which allows the local interconnect to pass over structures previously formed on the substrate.

Metallurgy for semiconductor devices

A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate, liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers

Chemical mechanical polishing compositions including an abrasive and cesium hydroxide and methods for polishing dielectric layers associated with integrated circuits using cesium hydroxide containing polishing compositions.

Use of CsOH in a dielectric CMP slurry

Slurry compositions comprising an oxidizing agent, copper corrosion inhibitor, abrasive particles; surface active agent and polyelectrolyte are useful for polishing or planarizing chip interconnect/wiring material such as Al, W and especially Cu.

Slurry for mechanical polishing (CMP) of metals and use thereof

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Richmond, VT, United States of America

Paul M Feeney