Kla Tencor Corporation

Paul Horn

Shifang Li

Lena Nicolaides

Mohan Mahadevan

Guoheng Zhao

Stanley E Stokowski

Isabella Talley Lewis

Youxian Wen

Prashant Aji

Wolfgang Vollrath

Ben-Ming Benjamin Tsai

Timothy Goodwin

Michael Gasvoda

Richard Graetz

A system is configured to perform metrology on a front surface, a back surface opposite the front surface, and/or an edge between the front surface and the back surface of a wafer. This can provide all wafer metrology and/or metrology of thin films on the back surface of the wafer. In an example, the thickness and/or optical properties of a thin film on a back surface of a wafer can be determined using a ratio of a greyscale image of a bright field light emerging from the back surface of the wafer under test to that of a reference wafer.

All surface film metrology system

Systems and methods for height measurements, such as those for bumps, pillars, or film thickness, can use chromatic confocal techniques. The system can include a white light source that emits white light and lenses that vary a focal distance of each wavelength of the white light from the white light source. Each of the wavelengths of the white light focuses at a different distance from the lenses. A sensor body has multiple sensors that are disposed in the sensor body in multiple rows and columns. Each of the rows and the columns has at least two of the sensors.

Speed enhancement of chromatic confocal metrology

This semiconductor inspection and metrology system includes a knife-edge mirror configured to receive light reflected from a wafer. The knife-edge mirror is positioned at a focal point of the light reflected from the wafer such that the reflective film on the knife-edge mirror is configured to block at least some of the light reflected from the wafer. The portion of blocked light changes when the light reflected from the wafer is under-focused or over-focused. At least one sensor receives the light reflected from the wafer. Whether the light is under-focused or over-focused can be determined using a reading from the at least one sensor. A height of an illuminated region on the surface of the wafer can be determined using such a reading from the at least one sensor.

Line scan knife edge height sensor for semiconductor inspection and metrology

Disclosed are methods and apparatus for imaging a rounded edge of a sample, such as a wafer with a beveled edge. In one embodiment, the system includes a curved diffuser having an internal surface for positioning towards the rounded edge of the sample and an external surface opposite the internal surface and light sources for generating a plurality of illumination beams adjacent to a plurality of positions on the external surface of the diffuser so that the diffuser outputs uniform light onto the rounded edge of the sample at a wide range of incident angles. The system further includes a sensor for receiving light scattered from the rounded edge of the sample in response to the incident light and generating a detected signal for generating an image. These elements are partially or entirely integrated into a compact assembly.

Miniaturized imaging apparatus for wafer edge

Field curvature of an optical system is modified based on topography of the surface of a wafer such that an image of each of the segments of the surface is in focus across the segment. The wafer may be non-planar. The optical system may be a multi-element lens system connected to a controller that modifies the field curvature by changing position of the lens elements. The wafer may be held by a chuck, such as an edge grip chuck. Multiple optical systems may be arranged across a dimension of the wafer.

Variable image field curvature for object inspection

This inspection system has an optical head, a support system, and a controller in electrical communication with the support system. The support system is configured to provide movement to the optical head with three degrees of freedom. The controller is programmed to control movement of the optical head using the support system such that the optical head maintains a constant angle of incidence relative to a wafer surface while imaging a circumferential edge of the wafer. An edge profiler may be scanned across the wafer to determine an edge profile. A trajectory of the optical head can be determined using the edge profile.

Wafer edge inspection with trajectory following edge profile

Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.

In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning

Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.

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Milpitas, CA, United States of America

Paul Horn