Alliedsignal Inc.

Paul E Schilling

Tian-An Chen

Kreisler S Lau

Neil H Hendricks

Daniel L Towery

Boris A Korolev

Emma Brouk

Heike W Thompson

An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

Oxidizing polishing slurries for low dielectric constant materials

Dielectric compositions encompassing one or more poly(arylene ether) polymers are provided. The dielectric compositions have the repetitive structural unit: ##STR1## where n=0 to 1; m=0 to 1-n; and Y.sub.1, Y.sub.2, Ar.sub.1 and Ar.sub.2 are each a divalent arylene radical, Y.sub.1 and Y.sub.2 derived from biphenol compounds, Ar.sub.1 derived from difluoroarylethynes and Ar.sub.2 derived from difluoroaryl compounds. Where both Y.sub.1 and Y.sub.2 are derived from fluorene bisphenol, n=0.1 to 1. Such poly(arylene ether) polymers are employed with a variety of microelectronic devices, for example, integrated circuits and multichip modules.

Poly(arylene ether) compositions and methods of manufacture thereof

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Granite Bay, CA, United States of America

Paul E Schilling