Lam Research Corporation

Novellus Systems Incorporated

Watkins- Johnson Company

Paul E Brunemeier

Robert H Havemann

Justin F Gaynor

Walter A Strifler

Archita Sengupta

Thomas Miu

Ronald David Remba

Daniel H Rosenblatt

Bruce C Schmukler

A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substantially determined by the second component. The function provided by the first component's response to radiation and the macroscopic properties determined by the second component are largely decoupled and thus may be separately optimized. Some embodiments provide photo-patternable low dielectric constant materials that may be advantageously employed in metal interconnect layers in integrated circuits, for example.

Inhomogeneous materials having physical properties decoupled from desired functions

A method in a plasma processing chamber, the chamber being employed for processing a substrate, for removing corrosive species from the plasma processing chamber after the substrate is processed. The method includes introducing a flash source gas comprising an oxidizing agent such as oxygen into the plasma processing chamber. The method further includes performing, a flash process, including striking a plasma in the plasma processing chamber with the flash source gas, thereby permitting oxygen species in the plasma to reduce a concentration of the corrosive species in the plasma processing chamber.

Plasma-enhanced flash process

A solution of hydrogen peroxide [H.sub.2 O.sub.2 ], citric acid [HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O], and a salt of citric acid such as potassium citrate [HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O], and hydrogen peroxide [H.sub.2 O.sub.2 ], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y&lt;0.2 & x&gt;0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.

Method of fabricating group III-V compound

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Sunnyvale, CA, United States of America

Paul E Brunemeier