Micron Technology Incorporated

Paul D Shirley

Hiroyuki Mori

Brian F Gordon

Salman Akram

Scott E Sills

Adam L Olson

William T Rericha

Lijing Gou

Craig A Hickman

Yoshiki Hishiro

Troy V Gugel

Gordon A Haller

Ziad R Hatab

Tony C Krauth

Systems, method and related apparatuses for adjusting support elements of a support apparatus to approximate a surface profile of a wafer. The support apparatus may include a group of mutually lateral adjacent support elements, each mutually lateral adjacent support element is configured to independently move at least vertically and comprising an upper surface. The support apparatus may further include a thermal energy transfer device operably coupled to each of the mutually lateral support elements, and an actuator system operably coupled to each of the support elements to selectively move one or more of the mutually lateral support elements vertically.

Methods for adjusting surface topography of a substrate support apparatus

Methods and apparatus for adjusting surface topography of a substrate support apparatus

A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

Methods of lithographically patterning a substrate

Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.

Method of reducing photoresist defects during fabrication of a semiconductor device

A method of patterning positive photoresist includes providing positive photoresist over a substrate. An area of the positive photoresist is exposed to a pattern of activating radiation at a dose which is below the Dose To CD of the pattern with the positive photoresist. The area of the positive photoresist is flood exposed to activating radiation at a dose from 1% to 75% of E. A sum of the flood dose and the pattern dose is less than the Dose To CD yet effective to resolve the pattern in the positive photoresist upon develop. After exposing the area to the flood dose and the pattern dose, the area of the positive photoresist is developed to resolve the pattern in the positive photoresist. Other embodiments are contemplated.

Methods of patterning positive photoresist

A semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. A process and method for soft baking the semiconductor wafer so that photoresist layers are free of surface voids or craters. The semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.

Method and apparatus for a two-step resist soft bake to prevent ILD outgassing during semiconductor processing

A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.

Systems and methods for manipulating liquid films on semiconductor substrates

In general, the system provides for soft baking a semiconductor wafer so that photoresist layers on the wafer are free of surface voids or craters. In particular, the system provides for manufacturing a semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. In the system, the semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.

System for two-step resist soft bake to prevent ILD outgassing during semiconductor processing

Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. &#xa7; 1.72(b).

Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines

A method and apparatus for forming a generally uniform liquid layer on a surface of an upper surface microelectronic substrate. The apparatus can include a support that engages less than the entire lower surface of the microelectronic substrate and rotates the microelectronic substrate at a selected rate. A barrier can extend over the upper surface of the microelectronic substrate and can rotate at about the same rate as the substrate to separate a rotating air mass adjacent to the upper surface and within the barrier from a stationary air mass external to the barrier. The rotating air mass can reduce the likelihood for liquid/air interface disturbances that create non-uniformities in the liquid layer. Accordingly, the method and apparatus can increase the range of thicknesses to which the liquid layer can be formed and can reduce the topographical non-uniformities of the liquid layer.

Method and apparatus for controlling air over a spinning microelectronic substrate

A method and apparatus for controlling a temperature of a microelectronic substrate. In one embodiment, the apparatus can include a substrate support configured to engage and support the microelectronic substrate. The apparatus can further include a temperature controller having one or more thermal links coupled directly with the substrate when the substrate is supported by the substrate support. The thermal links can maintain thermal contact with the substrate when the substrate is either stationary or mobile relative to the temperature controller. The temperature controller can heat or cool different portions of the substrate at different rates with one or more of several heat transfer devices, including liquid jets, gas jets, resistive electrical elements and/or thermoelectric elements.

Method and apparatus for controlling a temperature of a microelectronic substrate

Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.

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Meridian, ID, United States of America

Paul D Shirley