Applied Materials, Inc.

Other

R & a Acoustical Structures

Paul D Butterfield

Shou-Sung Chang

Liang-Yuh Chen

Stan D Tsai

Alain Duboust

Rashid Mavliev

Antoine P Manens

Ralph M Wadensweiler

Haosheng Wu

Feng Quan Liu

Yan Wang

Jianshe Tang

Alexander John Fisher

Yongqi Hu

Manoocher Birang

Hari N Soundararajan

Siew Neo

Hung Chih Chen

Sen-Hou Ko

Bum Jick Kim

Yuchun Wang

Daniel A Carl

Chih Chung Chou

Lizhong Sun

Phillip R Sommer

Stephen Jew

Yen-Chu Yang

Steven M Zuniga

Fred Conrad Redeker

Jeonghoon Oh

Thomas H Osterheld

Hui W Chen

Lakshmanan Karuppiah

Yonqi Hu

Ratson Morad

Jason Garcheung Fung

Erik S Rondum

Yuan Tian

Hui Chen

Chad Pollard

Takashi Fujikawa

Calvin Lee

Jay Gurusamy

Jimin Zhang

Donald J K Olgado

You Wang

Joshua T Oen

Gary C Ettinger

Ching-Ling Meng

Ming-Kuei Tseng

Eric Lau

Jie Diao

Renhe Jia

Jonathan Paul Domin

Zhenhua Zhang

Dmitry Sklyar

Ricardo Martinez

Robert A Ewald

Shuchivrat Datar

Balasubramaniam Coimbatore Jaganathan

Matthew A Gallelli

Kevin Chou

Eashwer Kollata

Liang-Yun Chen

Wilbert H Rimper

Richard R Atcheson

An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Steam treatment stations for chemical mechanical polishing system

A polishing assembly includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit to carry a fluid from the fluid source into the chemical mechanical polishing system. The chemical mechanical polishing system including a platen to support a polishing pad, a carrier head to support a substrate and bring the substrate into contact with the polishing pad, and a motor to cause relative motion between platen and the carrier head. The fluid delivery conduit includes electrically insulative tubing, a conductive wrapper wrapped around an outer diameter of the tubing from a first end of the tubing to a second end of the tubing, and a conductive wire attached to the conductive wrapper first end. The conductive wrapper is configured to conduct an electrostatic discharge, and the conductive wire is configured to conduct the electrostatic discharge from the conductive wrapper to a grounding source.

Insulated fluid lines in chemical mechanical polishing

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.

Slurry distribution device for chemical mechanical polishing

A chemical mechanical polishing system includes a steam generator with a heating element to apply heat to a vessel to generate steam, an opening to deliver steam onto a polishing pad, a first valve in a fluid line between the opening and the vessel, a sensor to monitor a steam parameter, and a control system. The control system causes the valve to open and close in accordance with a steam delivery schedule in a recipe, receive a measured value for the steam parameter from the sensor, receive a target value for the steam parameter, and perform a proportional integral derivative control algorithm with the target value and measured value as inputs so as to control the first valve and/or a second pressure release valve and/or the heating element such that the measured value reaches the target value substantially just before the valve is opened according to the steam delivery schedule.

Control of steam generation for chemical mechanical polishing

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

Polishing system with annular platen or polishing pad

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

Use of steam for pre-heating of CMP components

A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.

Steam cleaning of CMP components

Polishing system with support post and annular platen or polishing pad

An apparatus for steam treatment of a carrier head or a substrate in a chemical mechanical polishing system includes a load cup, a pedestal in a cavity defined by the load cup, the pedestal configured to receive a substrate from or supply a substrate to a carrier head, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into the cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. The first barrier includes a solid first body having a first flat bottom surface and having a first leading surface configured to contact the used polishing liquid.

A polishing system includes a platen having a top surface, an annular polishing pad supported on the platen, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure from which the carrier head is suspended and which is configured to move the hold the carrier head laterally across the polishing pad, and a controller. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen, and the inner edge of the annular polishing pad is positioned around the axis of rotation. The controller is configured to cause the support structure to position the carrier head such that a portion of the substrate overhangs the inner edge of the annular polishing pad while the substrate is contacting the polishing pad.

Polishing system with annular platen or polishing pad for substrate monitoring

A chemical mechanical polishing apparatus includes a plate on which a substrate is received, and a movable polishing pad support and coupled polishing pad which move across the substrate and orbit a local region of the substrate during polishing operation. The load of the pad against the substrate, the revolution rate of the pad, and the size, shape, and composition of the pad, may be varied to control the rate of material removed by the pad.

Orbital polishing with small pad

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San Jose, CA, United States of America

Paul D Butterfield