Applied Materials, Inc.

Cypress Semiconductor Corporation

Kla Tencor Corporation

Paul Arleo

Mei Yin Chang

Mei H Sun

Siamak Salimian

Hyman J Levinstein

Chan-Lon Yang

Earl M Jensen

Robert W Wu

Jerry Yuen Wong

James E Nulty

Jianmin Qiao

Graham W Hills

Farhat A Quli

Vaibhaw Vishal

Haojiang Li

Jon Henri

A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

Process condition measuring device (PCMD) and method for measuring process conditions in a workpiece processing tool configured to process production workpieces

An electrostatic or mechanical chuck assembly includes gas inlets only in an annulus-shaped peripheral portion and not in the central region of the chuck. The gas inlets are in fluid communication with one or more gas conduits and supply of the backside of a workpiece, such as a semiconductor wafer, with inert coolant gas or gases. The gas or gases supplied only to the peripheral region of the chuck effectively cool the central region of the chuck by at least two physical mechanisms, including the thermal conduction through the workpiece and diffusion of the gas or gases in the interstitial space(s) between the somewhat irregular facing surfaces of the chuck and of the backside of the workpiece.

ELECTROSTATIC OR MECHANICAL CHUCK ASSEMBLY CONFERRING IMPROVED TEMPERATURE UNIFORMITY ONTO WORKPIECES HELD THEREBY, WORKPIECE PROCESSING TECHNOLOGY AND/OR APPARATUS CONTAINING THE SAME, AND METHOD(S) FOR HOLDING AND/OR PROCESSING A WORKPIECE WITH THE SAME

A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of a hydrogen-bearing gas to C,F,or C,F,etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface.

Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography

A method of plasma etching oxide in the presence of nitride includes contacting the oxide with a mixture of gases including one or more flourine-substituted hydrocarbon etching gases and acetylene. The method exhibits high selectivity to nitride, including nitride on uneven surfaces.

Oxide etch process using a mixture of a fluorine-substituted hydrocarbon

An improved process is described for forming one or more vias through an insulation layer by plasma etching to an underlying metal layer without depositing etch residues, including metal sputtered from the underlying metal layer, onto the sidewalls of the vias, which comprises, in one embodiment, using in the gaseous etchant one or more 3-6 carbon fluorinated hydrocarbons having the formula C.sub.x H.sub.y F.sub.z, wherein x is 3 to 6, y is 0 to 3, and z is 2x-y when the fluorinated hydrocarbon is cyclic and z is 2x-y+2 when the fluorinated hydrocarbon is noncyclic. One or more other fluorine-containing gases may also be used as long as the 3-6 carbon fluorinated hydrocarbons comprise at least 10 volume % of the fluorine-containing gas mixture. The fluorinated hydrocarbon gas or fluorine-containing gas mixture also may be mixed with up to 90 volume % total of one or more inert gases to control the taper of the via walls. At least about 5 sccm of the total gas flow must comprise a 3-6 carbon fluorinated hydrocarbon gas, regardless of the volume % of 3-6 carbon fluorinated hydrocarbon gas in the total gas stream flow. In another embodiment, a controlled amount of one or more nitrogen-containing gases are used with one or more fluorine-containing etchant gas wherein the amount of nitrogen-containing gas ranges from about 1 volume part nitrogen-containing gas per 15 volume parts fluorine-containing gas to about 1 volume part nitrogen-containing gas per 2 volume parts fluorine-containing gas.

Process for forming a via in an integrated circuit structure by etching

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San Francisco, CA, United States of America

Paul Arleo