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Wappingers Falls, NY, United States of America

Paul A Papworth

Average Co-Inventor Count = 6.00

ph-index = 5

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 43

Paul A PapworthHerbert Lei Ho (6 patents)Paul A PapworthChristopher D Sheraw (6 patents)Paul A PapworthMahender Kumar (6 patents)Paul A PapworthMichael D Steigerwalt (6 patents)Paul A PapworthQiqing Christine Ouyang (5 patents)Paul A PapworthQiging Ouyang (1 patent)Paul A PapworthPaul A Papworth (6 patents)Herbert Lei HoHerbert Lei Ho (117 patents)Christopher D SherawChristopher D Sheraw (26 patents)Mahender KumarMahender Kumar (24 patents)Michael D SteigerwaltMichael D Steigerwalt (16 patents)Qiqing Christine OuyangQiqing Christine Ouyang (83 patents)Qiging OuyangQiging Ouyang (3 patents)
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Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. International Business Machines Corporation (6 from 164,108 patents)


6 patents:

1. 7911024 - Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof

2. 7763518 - Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof

3. 7691716 - Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation

4. 7485537 - Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness

5. 7375410 - Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof

6. 7115965 - Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation

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12/3/2025
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