Asml Netherlands B.v.

Asml Holding N.v.

Patrick Warnaar

Maurits Van Der Schaar

Patricius Aloysius Jacobus Tinnemans

Arie Jeffrey Den Boef

Hendrik Jan Hidde Smilde

Vasco Tomas Tenner

Michael Kubis

Grzegorz Grzela

Frank Staals

Nitesh Pandey

Franciscus Godefridus Casper Bijnen

Willem Marie Julia Marcel Coene

Wim Tjibbo Tel

Armand Eugene Albert Koolen

Marinus Jochemsen

Murat Bozkurt

Olger Victor Zwier

Hugo Augustinus Joseph Cramer

Kaustuve Bhattacharyya

Mohammadreza Hajiahmadi

Lukasz Jerzy Macht

Martin Jacobus Johan Jak

Simon Hendrik Celine Van Gorp

Mark John Maslow

Bastiaan Onne Fagginger Auer

Abraham Slachter

Koenraad Van Ingen Schenau

Davit Harutyunyan

Roy Anunciado

Si-Han Zeng

Joost Jeroen Ottens

Arno Jan Bleeker

Alexander Straaijer

Everhardus Cornelis Mos

Paul Christiaan Hinnen

Elliott Gerard McNamara

Edo Maria Hulsebos

Zili Zhou

Stefan Cornelis Theodorus Van Der Sanden

Bart Peter Bert Segers

Simon Philip Spencer Hastings

Alberto Da Costa Assafrao

Hilko Dirk Bos

Yue-Lin Peng

Marc Van Kemenade

Nikhil Mehta

Jen-Yu Fang

Ching-Yi Hung

Richard Johannes Franciscus Van Haren

Justin Lloyd Kreuzer

Scott Anderson Middlebrooks

Youping Zhang

Henricus Petrus Maria Pellemans

Markus Gerardus Martinus Maria Van Kraaij

Martin Ebert

Adrianus Cornelis Matheus Koopman

Hoite Pieter Theodoor Tolsma

Anton Bernhard Van Oosten

Sami Musa

Sanjaysingh Lalbahadoersing

Manfred Gawein Tenner

Sergey Tarabrin

Jeroen Cottaar

Victor Emanuel Calado

Brennan Peterson

Sergei Sokolov

Erik Johan Koop

Amandev Singh

Lorenzo Tripodi

Maya Angelova Doytcheva

Narjes Javaheri

Mark Van Schijndel

Farzad Farhadzadeh

Jozef Cornelis Antonius Roijers

Feng Xiao

Tieh-Ming Chang

Samira Bahrami

Mykhailo Semkiv

Karel Hendrik Wouter Van Den Bos

Lucas Tijn Kunneman

A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Computational metrology

Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.

Method for filtering an image and associated metrology apparatus

Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

Metrology system and method for determining a characteristic of one or more structures on a substrate

Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

Target for measuring a parameter of a lithographic process

A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

Method of determining control parameters of a device manufacturing process

Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

Metrology apparatus and method for determining a characteristic of one or more structures on a substrate

Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.

Metrology method and associated computer product

Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

Metrology targets

A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

Metrology method and apparatus, substrate, lithographic system and device manufacturing method

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Tilburg, Netherlands

Patrick Warnaar