Air Products and Chemicals, Inc.

Tokyo Electron Limited

Patrick Timothy Hurley

Mark Leonard O'Neill

Raymond Nicholas Vrtis

Robert Gordon Ridgeway

Takashi Matsumoto

Jacques Faguet

Andrew David Johnson

Eric M Lee

John Giles Langan

Osayuki Akiyama

Katherine Anne Hutchison

A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.

Chemical vapor deposition method

A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SiCNHF, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.

Antireflective coatings for photovoltaic applications

Chemical additives are used to increase the rate of deposition for the amorphous silicon film (&#x3b1;Si:H) and/or the microcrystalline silicon film (&#x3bc;CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Additives to silane for thin film silicon photovoltaic devices

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Allentown, PA, United States of America

Patrick Timothy Hurley