Infineon Technologies Ag

Patrick Schwarz

Joachim Mahler

Hans-Joachim Schulze

Thorsten Meyer

Johannes Georg Laven

Khalil Hosseini

Ivan Nikitin

Georg Meyer-Berg

Manfred Schneegans

Irmgard Escher-Poeppel

Christian Jaeger

Edmund Riedl

Anton Prueckl

Johannes Lodermeyer

Daniel Pedone

Reinhard Pufall

Klaus Schmidt

Andre Schwagmann

A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.

Metallic interconnect, a method of manufacturing a metallic interconnect, a semiconductor arrangement and a method of manufacturing a semiconductor arrangement

A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

Semiconductor devices with transistor cells and thermoresistive element

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Kallmuenz, Germany

Patrick Schwarz