Siltronic Ag

Patrick Moos

Reinhard Schauer

Hannes Hecht

A device for handling a semiconductor wafer in an epitaxy reactor has a susceptor; longitudinal holes extending through the susceptor; a wafer lifting shaft; wafer lifting pins guided through the longitudinal holes; a susceptor carrying shaft; susceptor carrying arms; susceptor support pins; guide sleeves anchored in the susceptor carrying arms; and guide elements protruding from the guide sleeves which, at upper ends, have bores into which wafer lifting pins are inserted, and which can be raised and lowered together with the wafer lifting pins by the wafer lifting shaft.

Device for handling a semiconductor wafer in an epitaxy reactor and method for producing a semiconductor wafer having an epitaxial layer

Semiconductor wafers with an epitaxial layer are produced in a deposition chamber by placing a substrate wafer in the edge region of the rear side of the substrate wafer onto a placement area of a susceptor;

Method for producing a semiconductor wafer with epitaxial layer in a deposition chamber, apparatus for producing a semiconductor wafer with epitaxial layer, and semiconductor wafer with epitaxial layer

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Pleiskirchen, Germany

Patrick Moos