Infineon Technologies Ag

Qoniac Gmbh

Patrick Lomtscher

Gerhard Kunkel

Stefan Buhl

William Roberts

Karl Schumacher

Philip Groeger

Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Wafer exposure method using wafer models and wafer fabrication assembly

An inspection system includes an illumination source configured to illuminate a blazed phase grating sample, image collection pathways and an imaging system configured to capture an image of a sample point of the blazed phase grating sample, and a controller configured to adjust the illumination source in response to an analysis of the image of the sample point to determine illumination uniformity of the inspection system.

Optimizing light path uniformity in inspection systems

Growing community of inventors

Dresden, Germany

Patrick Lomtscher