The Boc Group, Inc.

Linde Gmbh

Patrick Joseph Helly

Ce Ma

Richard A Hogle

Qing Min Wang

Masud Akhtar

Laura Joy Miller

A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Method and apparatus for using solution based precursors for atomic layer deposition

The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.

Methods for forming low-k dielectric films

A process for purifying methylsilane is described. Methylsilane containing impurities such as carbon dioxide, chlorosilane and atmospheric gases is fed from a source container unit to an adsorption unit at &minus;40&deg; C. The adsorption unit is connected to a collection unit at &minus;190&deg; C. where the purified methylsilane is transported and can be stored.

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Valley Center, CA, United States of America

Patrick Joseph Helly