L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Softal Electronic Gmbh

Pascal Bouard

Frank Slootman

Dominique Jouvaud

Eckhard Prinz

Francedillaois Coeuret

Philippe Labrune

Panayotis Cocolios

Alain Villermet

Antoine Willemot

Michel Gastiger

Franciscus Slootman

Michel-Jacques Gastiger

A product substrate coated with a uniform deposit of silicon oxide created by subjecting the substrate to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

Silicon oxide on a substrate

A device for creating a deposit of silicon oxide on a traveling solid substrate, wherein the substrate is subjected to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

Device for creating a deposit of silicon oxide on a traveling solid

According to the process the substrate (2) is subjected to an electrical discharge with a dielectric barrier, for example a discharge in the presence of an atmosphere containing a silane, an oxidizing gas, NO, N.sub.2 O, CO.sub.2 or O.sub.2, in particular, and a neutral carrier gas such as nitrogen or argon. A controlled atmosphere containing the silane and the oxidizing gas is maintained in the immediate vicinity of the electrode, around the electrode (6) employed for the electrical discharge, while avoiding the process being perturbed by atmospheric air entrained, for example, by the substrate (2) as it travels (3).

Process for creating a deposit of silicon oxide on a traveling solid

The invention concerns a process for depositing a thin layer of silicon oxide bonded to a substrate of a polymeric material comprising, concomitantly or consecutively (1) subjecting a surface of the substrate to an electrical discharge with dielectric barrier and (2) exposing said surface of the substrate to an atmosphere containing a silane, thus forming a deposit of silicon oxide bonded to said surface of the substrate Application to the production of sheets or films useful for example as food wrapping.

Process of depositing a layer of silicon oxide bonded to a substrate of

A process for producing a silicon oxide deposit at the surface of a metallic substrate comprising the following steps performed either concomitantly or successively: (1) treating the surface of the substrate with a corona discharge; and (2) exposing the surface to an atmosphere containing a silicon compound in the gaseous state. Both steps (1) and (2) are conducted at a pressure greater than 10,000 Pa. This process can be used to provide anti-corrosion treatment to a metallic substrate or to a metallized polymeric support.

Process for producing a silicon oxide deposit on the surface of a

The invention relates to a process for the separation of a gaseous hydride or a mixture of gaseous hydrides from a gaseous medium containing at least one gas from the group consisting of H.sub.2, Ar, He, according to which the gaseous medium is passed on to a membrane module so that the concentration of the hydride or of the mixture of hydrides obtained at the outlet of the module is higher than their initial concentration in the gaseous medium.

Process for the separation of a gaseous hydride or a mixture of gaseous

The invention relates to a process for the electrolytic generation of arsine from an electrochemical cell provided with a cathode supplied with H.sup.+ and AsO.sub.2.sup.- ions where two concurrent reactions take place producing arsine and gaseous hydrogen respectively, and an anode where a reaction producing H.sup.+ ions takes place, the ratio of the H.sup.+ /As concentrations at the cathode being controlled and kept constant.

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Draveil, France

Pascal Bouard