Samsung Electronics Co., Ltd.

Texas Instruments Corporation

Parvinder Kumar Rana

Lava Kumar Pulluru

Manish Chandra Joshi

Ankur Gupta

Abhishek Ghosh

Akash Kumar Gupta

Shyam Agarwal

Abhishek Kesarwani

Wah Kit Loh

Sajal Mittal

Lakshmikantha V Holla

Gayatri Nair

Rajeela Deshpande

Xiaowei Deng

Anand Seshadri

Robert L Pitts

Dharin Nayeshbhai Shah

Aatmesh Shrivastava

Vipul Kumar Singhal

Srinivasa Raghavan Sridhara

Rashmi Sachan

Atul Ramakant Lele

Rajesh Yadav

Raviprakash Suryanarayana Rao

Keshav Bhaktavatson Chintamani

Premkumar Seetharaman

Ajith Subramonia

Malav Shrikant Shah

Rahul Kataria

Bharath Kumar Poluri

Ravi Shankar Prasad

Ambuj Jain

Shreyas Samraksh Jayaprakash

Sandeep B V

Jaskaran Singh Bhatia

Shubham Ranjan

Nikhila C M

Janardhan Achanta

Shuvadeep Kumar

Sanjeev Kumar Suman

The present invention discloses a wordline driver circuit for a random-access memory (RAM), which can reduce leakage during power down mode. The circuit includes a pre-driver stage on header and footer. The pre-driver stage includes a strap buffer defining a header and comprising a first switch connecting a first set of wordlines to a first voltage. The pre-driver stage includes an input-output buffer defining a footer and comprising a second switch connecting a second set of wordlines to a second voltage. In the pre-driver stage, the strap buffer further includes a third switch connecting the second set of wordlines to the first voltage and a fourth switch connecting the first set of wordlines to the second voltage.

Circuits for power down leakage reduction in random-access memory

A bitline precharge system is provided for a semiconductor memory device. The bitline precharge system comprises a voltage comparator circuit to output a reference voltage signal based on an input wordline voltage supply level (VDDWL), and a periphery power supply voltage (VDDP) level. A voltage control circuit is electrically coupled to a periphery power supply and the voltage comparator circuit to output a precharge voltage (VDDM) level based on the reference voltage signal and the periphery power supply voltage (VDDP) level. A bitline precharge circuit is electrically coupled to the voltage control circuit and a plurality of bitlines of the memory device to precharge the plurality of bitlines based on the precharge voltage (VDDM) level in response to a precharge enable signal during one of a read operation to read data from the memory device and a write operation to write data from the memory device. Further, the at least one bitline is discharged from the precharge voltage (VDDM) level during at least one of the read operation or the write operation.

Bitline precharge system for a semiconductor memory device

An apparatus includes a NMOS transistor having a drain, a first PMOS transistor having a drain connected to the drain of the NMOS transistor, a level shifter having an input and an output, the input of the level shifter being connected to the drain of the NMOS transistor and the drain of the first PMOS transistor, a first digital logic circuit having a drain and a gate, a first inverter having an input connected to the Aoutput of the level shifter and the drain of the first digital logic circuit, and a second digital logic circuit having an output connected to the gate of the first digital logic circuit, at least one condition being set in the apparatus during a read operation.

Level shifter circuits

Inventive concepts describe a method for high performance standard cell design techniques in FinFET based library using LLE. Inventive concepts describe a fabrication process using a standard FinFET cell layout having double diffusion breaks (DDBs) and single diffusion breaks (SDBs). According to one example embodiment, the method comprises of removing one or more fingers of a P-type FinFet (PFET) from a standard FinFET cell layout. After removing the one or more fingers, a Half-Double Diffusion Break (Half-DDB) is introduced on a N-type FinFET (NFET) side inside a cell boundary using a cut-poly layer. The cut-poly layer not only isolates the PFET and NFET gates and also becomes an integral part of hybrid structure. Further, the removed one or more fingers of PFET gates are converted to two floating PFET gates by shorting a drain terminal and a source terminal of the PFET gate to a common power net.

Method for high performance standard cell design techniques in FinFET based library using local layout effects (LLE)

Embodiments herein provide a Static Random-Access Memory (SRAM) system with a delay tuning circuitry and a delay control circuitry and a method thereof. Delay tuning circuitry in the SRAM system may provide a tuning of reset time in the generation of an internal clock by introducing a delay. The delay is introduced according to a process state of periphery circuitry in the SRAM. A delay control circuitry provides a control over delay in reset time of the internal clock by varying a discharge rate for each of a Dummy Bit Line (DBL) circuitry and Complementary Bit Line Circuitry (CDBL), by connecting a stack of NMOS transistors over discharge NMOS transistors.

Static random-access memory (SRAM) system with delay tuning and control and a method thereof

Provided are apparatus and methods for compensating fabrication process variation of on-chip component(s) in shared memory bank. The method includes tracking a flip voltage level and tracking a discharge leakage current to disconnect a keeper circuit from the local read bit-line. The method includes controlling a read current and the discharge leakage current based on determining at least one of fast transistor and slow transistor associated with the at least one the keeper circuit and a bit-cell.

Apparatus and methods for compensating for variations in fabrication process of component(s) in a memory

A static random-access memory (SRAM) system using a virtual banking architecture includes a processor communicatively coupled to an SRAM, and a plurality of circuits disposed in the SRAM and operated under control of the processor. The circuits include a divide circuit, a select circuit disposed in the divide circuit, and a local input/output circuit. The divide circuit divides a bank into first and second bit cell arrays, in which the first bit cell array and/or the second bit cell array includes at least one bit line. The select circuit is connected between the first and second bit cell arrays, and the select circuit selects one of the first and second bit cell arrays according to a predefined select logic. The local input/output circuit is connected to the select circuit and generates an output according to one or more predefined operations of the local input/output circuit.

Static random-access memory with virtual banking architecture, and system and method including the same

Various example embodiments herein disclose a flip-flop including a master latch comprising one of: a plurality of P-type metal-oxide-semiconductor (PMOS) and a plurality of N-type metal-oxide-semiconductor (NMOS). A slave latch includes one of: a plurality of PMOS and a plurality of NMOS. An inverted clock signal input is communicatively connected with the master latch and the slave latch. The master latch includes a single pre-charge node. The single pre-charge node sets up a data capture path in the flip flop. Data is stored in the master latch and the slave latch via the pre-charge node.

Flip-flop with single pre-charge node

A fin-Field Effect Transistor based system on chip (SoC) memory is provided and includes a control block, first logic gates, and row decoder blocks. The control block includes a clock generator circuit that generates an internal clock signal, and a global driver circuit coupled to the clock generator circuit that drives a global clock signal. Each row decoder block includes a second logic gate that receives higher order non-clocked address signals via input terminals, a transmission gate that combines the global clock signal and the higher order non-clocked address signals, third logic gates that receive lower order non-clocked address signals and higher order clocked address signals, and output a combined lower order address and higher order address along with the global clock signal, level shifter circuits that receive the outputs, and word-line driver circuits that generate word-lines based on the output of the level shifter circuits.

Methods and systems for performing decoding in finFET based memories

A method and a flip-flop for designing low power integrated circuits (IC's). The method includes receiving at least one of a clock signal, a data signal, and a complimentary data signal. The complimentary data signal is produced by an input data inverter present in the flip-flop. Further, the method includes generating at least one master internal signal based on the received at least one of the clock signal, the data signal, and the complimentary data signal, when the clock signal is at a low logic level. Further, the method includes generating at least one slave internal signal based on at least one of the received clock signal and the generated at least one master internal signal, when the clock signal is at a high logic level. Further, the method includes generating an output signal based on the generated at least one slave internal signal.

Low voltage tolerant ultra-low power edge triggered flip-flop for standard cell library

A method and a sense amplifier flip-flop (SAFF) for fixing setup time violations in an integrated circuit (IC) design. The SAFF includes a master latch coupled to a slave latch, wherein the master latch includes a sense amplifier and the SAFF is configured with an equal number of p-type metal oxide semiconductor (PMOS) transistors and n-type metal oxide semiconductor (NMOS) transistors to reduce block area of an integrated circuit (IC). The method includes receiving a clock signal, receiving a data signal, applying the data signal to the sense amplifier when the clock signal is at a low level, wherein a portion of the sense amplifier is responsive to the inverted clock signal, storing a value of the data signal in the slave latch when the clock signal transitions from the low level to the high level, and providing an output signal from the slave latch.

Sense amplifier flip-flop and method for fixing setup time violations in an integrated circuit

Embodiments herein provide a method for reducing power dissipation in a Static Random Access Memory (SRAM) device. The method includes determining, by the tracking circuit, whether at least one SRAM Bit-Cell discharges power from at least one BL exceeding a pre-defined voltage level required for a sense amplifier to perform a read operation. Furthermore, the method includes reducing, by the WL driver, the power discharged from the at least one BL by controlling a WL voltage power supply switch of the WL driver using a SAE signal and adjusting a pulse width of the at least one WL to pull down the at least one WL using a NMOS circuit when the at least one SRAM Bit-Cell discharges the power from the at least one BL exceeding the pre-defined voltage level.

Methods and apparatuses to reduce power dissipation in a static random access memory (SRAM) device

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Bengaluru, India

Parvinder Kumar Rana