Taiwan Semiconductor Manufacturing Comp. Ltd.

Pao-Sheng Chen

Chih-Chien Chi

Pei-Hsuan Lee

Szu-Hua Wu

Jung-Tang Wu

A method for forming a semiconductor device, includes: forming a metal layer on a semiconductor substrate; forming a dielectric layer over the metal layer; etching a top portion of the dielectric layer; after etching the top portion of the dielectric layer, removing first mist from a bottom portion of the dielectric layer; removing the bottom portion of the dielectric layer to expose the metal layer; performing a pre-clean operation, using an alcohol base vapor or an aldehyde base vapor, on the dielectric layer and the metal layer; and forming a conductor extending through the dielectric layer and in contact with the metal layer.

Method for forming semiconductor device

In a method for manufacturing a semiconductor device, a substrate is provided. Various first metal layers are formed on the substrate. A dielectric structure with through holes is formed over the first metal layers. The through holes expose the first metal layers. A pre-clean operation is performed on the dielectric structure and the first metal layers by using an alcohol base vapor and/or an aldehyde base vapor as a reduction agent. Conductors are formed on the first metal layers. In forming the conductors, the through holes are filled with the conductors.

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Tainan, Taiwan

Pao-Sheng Chen