Qualcomm Incorporated

Pankaj Deshmukh

Jungwon Suh

Subbarao Palacharla

Shyamkumar Thoziyoor

Behnam Dashtipour

Victor Van Der Veen

David Hartley

Michael Hawjing Lo

Mosaddiq Saifuddin

Vishakh Balakuntalam Visweswara

Xia Li

Bin Yang

Olivier Alavoine

Amod Phadke

Anurag Nannaka

Vanamali Bhat

Vajram Ghantasala

Udayakiran Kumar Yallamaraju

Arun Sundaresan Iyer

Bharatheesha Sudarshan Jagirdar

Vishal Mishra

A DRAM memory controller is provided that identifies a marker command directed to a given row in a DRAM. If a threshold probability is satisfied in response to an identification of the marker command, the DRAM memory controller commands the DRAM to refresh a neighboring row in the DRAM. The neighboring row may be a neighboring of the given row or of a recently-closed row.

DRAM with quick random row refresh for rowhammer mitigation

Various embodiments include methods and devices for reducing latency in pseudo channel based memory systems. Embodiments may include a first pseudo channel selection device configured to selectively communicatively connect one of a plurality of pseudo channels to a first input/output (IO), and a second pseudo channel selection device configured to selectively communicatively connect one of the plurality of pseudo channels to a second IO, in which the first pseudo channel selection device and the second pseudo channel selection device may be operable to communicatively connect a first pseudo channel of the plurality of pseudo channels to the first IO and to the second IO concurrently. Embodiments may include the pseudo channel based memory system configured to receive a memory access command targeting the first pseudo channel, and use a first pseudo channel data bus and a second pseudo channel data bus to implement the memory access command.

Reducing latency in pseudo channel based memory systems

Various embodiments include systems and methods for improving the efficiency of a memory subsystem in a computing device. The memory subsystem may be configured to detect memory access events and determining their associated timings and determine an efficiency of the memory subsystem based on operational parameters of the memory subsystem, the detecting memory access events, and associated timings. The memory subsystem may adjust the operational parameters of the memory subsystem based on the determined efficiency of the memory subsystem. The memory subsystem may dynamically modify the operations of the memory subsystem based on the adjusted operational parameters.

Self-characterizing, evaluating, and adaptive high performance memory controller

Mitigating or managing an effect known as 'rowhammer' upon a DRAM device may include a memory controller receiving an activation count threshold value from the DRAM device. The memory controller may detect row activation commands directed to the DRAM device and count the number of the row activation commands. The memory controller may send a mitigative refresh command to the DRAM device based on the result of comparing the counted number of row activation commands with the received activation count threshold value.

Dynamic rowhammer management

This disclosure provides systems, methods, and devices for memory systems that support metadata. In a first aspect, a method of handling data and metadata at a memory device includes receiving data from the host via the at least one data connection into the first plurality of registers; receiving metadata from the host via the at least one non-data connection into the second plurality of registers; storing the data in the first portion of the memory array; and storing the metadata in the second portion of the memory array. Other aspects and features are also claimed and described.

Metadata registers for a memory device

This disclosure provides systems, methods, and devices for memory systems that support operating a least portions of a memory core at a frequency lower than a memory clock to reduce power consumption and cost. In a first aspect, a memory controller includes a first core for scheduling a first memory operation for a first portion of a clock cycle of the memory clock and includes a second core for scheduling a second memory operation for a second portion of the clock cycle of the memory clock. Other aspects and features are also claimed and described.

Multiple-core memory controller

An effect known as 'rowhammer' may be mitigated in a DRAM organized in sub-banks of two or more rows. Row activation commands directed to a sub-bank may be detected. The number of row activation commands occurring within a refresh window may be counted and compared with a threshold. When it is detected that the number of row activation commands within the refresh window exceeds the threshold, an additional refresh command may be provided to the DRAM.

Dynamic random access memory (DRAM) row hammering mitigation

A memory system with adaptive refresh commands is disclosed. In one aspect, a memory system or device that has multiple banks within a channel may receive a per bank command that indicates a first bank to be refreshed and provides additional information about a second bank to be refreshed. In a further exemplary aspect, a quad bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through fourth banks to be refreshed. In a further exemplary aspect, an octa bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through eighth banks to be refreshed. The three new refresh commands allow adjacent or spaced banks to be refreshed.

Memory system with adaptive refresh

Various embodiments include methods for implementing flexible ranks in a memory system. Embodiments may include receiving, at a memory controller, a first memory access command and a first address at which to implement the first memory access command in a logical rank, generating, by the memory controller, a first signal configured to indicate to a first memory device of the logical rank to implement the first memory access command via a first partial channel, sending, from the memory controller, the first signal to the first memory device, generating, by the memory controller, a second signal configured to indicate to a second memory device of the logical rank that is different from the first memory device to implement the first memory access command via a second partial channel, and sending, from the memory controller, the second signal to the second memory device.

Flexible dual ranks memory system to boost performance

A system includes a first park circuit having a signal input, an output, and a control input. The system also includes a first signal path having an input and an output, wherein the input of the first signal path is coupled to the output of the first park circuit. The system also includes a second park circuit having a signal input, an output, and a control input, wherein the signal input of the second park circuit is coupled to the output of the first signal path. The system further includes a second signal path having an input and an output, wherein the input of the second signal path is coupled to the output of the second park circuit.

Mitigation of duty-cycle distortion

Dynamic random access memory (DRAM) data may be accessed by a memory controller using a broadcast mode or a non-broadcast mode. In the broadcast mode, a first portion of data that is the subject of an access request and a second portion of the data that is the subject of the access request may be accessed concurrently via first and second pseudo-channels, respectively. In the non-broadcast mode, data that is the subject of the access request may be accessed via a selected one of the first and second pseudo-channels.

Growing community of inventors

San Diego, CA, United States of America

Pankaj Deshmukh