Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Pang-Shiuan Liu

Samuel C Pan

Tuo-Hung Hou

A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (D) material over the substrate. Source and drain contacts are formed partially over theD material. A first dielectric layer is formed at least partially over the channel structure and at least partially over the source and drain contacts. The first dielectric layer is configured to trap charge carriers. A second dielectric layer is formed over the first dielectric layer, and a gate electrode is formed over the second dielectric layer.

Impact ionization semiconductor device and manufacturing method thereof

A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material over the substrate. Source and drain contacts are formed partially over the 2D material. A first dielectric layer is formed at least partially over the channel structure and at least partially over the source and drain contacts. The first dielectric layer is configured to trap charge carriers. A second dielectric layer is formed over the first dielectric layer, and a gate electrode is formed over the second dielectric layer.

Growing community of inventors

Taoyuan, Taiwan

Pang-Shiuan Liu