Changxin Memory Technologies, Inc.

Beijing Superstring Academy of Memory Technology

Pan Yuan

Guangsu Shao

Zhan Ying

Xiaojie Li

Xingsong Su

Qiang Zhang

Minmin Wu

The present application provides a semiconductor structure and a manufacturing method thereof, relates to the technical field of semiconductors. The manufacturing method includes: providing a substrate, the substrate including a first semiconductor material layer, a silicon-germanium compound layer and a second semiconductor material layer that are stacked sequentially; forming, in the substrate, first trenches extending along a first direction and second trenches extending along a second direction, and the first trenches and the second trenches separating the substrate into a plurality of spaced pillar structures; doping the pillar structures, such that the silicon-germanium compound layer forms a channel region; and forming a dielectric layer on an outer peripheral surface of each of the pillar structures, and a gate on an outer peripheral surface of the dielectric layer, the gate being opposite to at least a part of the channel region.

Semiconductor structure with silicon-germanium compound and manufacturing method thereof

Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a base; forming a bottom electrode layer on the base, wherein a crystal structure of the bottom electrode layer includes a tetragonal crystal system; forming a first dielectric layer on a surface of the bottom electrode layer by using the bottom electrode layer as a seed layer, wherein a crystal structure of the first dielectric layer includes a tetragonal crystal system; and forming a first current blocking layer on a surface of the first dielectric layer.

Semiconductor structure and manufacturing method thereof

Provided are a method for preparing a semiconductor structure, a semiconductor structure and a semiconductor memory. The method includes the following operations. An initial semiconductor structure is formed on a substrate. The initial semiconductor structure is etched to form an array area structure and a peripheral area structure including a peripheral area gate structure. An isolation wall surrounding the peripheral area gate structure is formed on the substrate where the peripheral area structure locates. A second dielectric layer is deposited on the peripheral area gate structure including the isolation wall and on the array area structure. The second dielectric layer, the first dielectric layer and the isolation wall are etched to form the semiconductor structure with a flat surface.

Semiconductor structure preparation method, semiconductor structure and semiconductor memory

Growing community of inventors

Hefei, China

Pan Yuan