Applied Materials, Inc.

Palaniappan Chidambaram

Siew Kit Hoi

Jay Min Soh

Mengxue Wu

Jiao Song

Yaoying Zhong

Yue Cui

Li Ying Choo

Haomin Xu

Xiao Tan

Chul Nyoung Lee

Jaysen Chiam

Methods and apparatus for processing a substrate in a process chamber include: positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide; flowing a plasma-forming gas into the process volume; and sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate.

Methods and apparatus for depositing amorphous indium tin oxide film

Sputter target for a physical vapor deposition chamber

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

Methods and apparatus for processing a substrate

Growing community of inventors

Singapore, Singapore

Palaniappan Chidambaram