National Yunlin University of Science and Technology

Pai-Yu Chang

Jian-Yang Lin

A method for fabricating a P-type polycrystalline silicon-germanium structure comprises steps: forming an aluminum layer and an amorphous germanium layer on a P-type monocrystalline silicon substrate in sequence; annealing the P-type monocrystalline silicon substrate, the aluminum layer and the amorphous germanium layer at a temperature of 400-650&#xb0; C.; and undertaking an aluminum-induced crystallization process in which germanium atoms of the amorphous germanium layer and silicon atoms of the P-type monocrystalline silicon substrate simultaneously pass through the aluminum layer and then the amorphous germanium layer being induced and converted into a P-type polycrystalline silicon-germanium layer between the P-type monocrystalline silicon substrate and the aluminum layer. The present invention is a simple, reliable and low-cost method to fabricate a P-type polycrystalline silicon-germanium layer on a P-type monocrystalline silicon substrate. In addition, the obtained P-type polycrystalline silicon-germanium layer can convert sunlight of longer wavelengths into electric energy.

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Douliu, Taiwan

Pai-Yu Chang