Ngk Insulators, Inc.

Commissariat a L'energie Atomique

Nagoya University

Nu-rei Co., Ltd.

Osamu Oda

Mitsuhiro Tanaka

Tomohiko Shibata

Yuji Hori

Masaru Hori

Keiichiro Asai

Bruno Daudin

Eva Monroy

Hiroyuki Kano

Yukinori Nakamura

Kenji Ishikawa

Hiroki Kondo

Takashi Egawa

Akihiro Wakahara

Takashi 405 Green Heights Ieiyakushi Egawa

[Object] To provide a radical generator which can produce radicals at higher density. [Means for Solution] The radical generator includes a supply tubemade of SUS, a hollow cylindrical plasma-generating tubewhich is connected to the supply tubeand which is made of pyrolytic boron nitride (PBN). A first cylindrical CCP electrodeand a second cylindrical CCP electrodeare disposed outside the plasma-generating tube. A coilis provided so as to wind about the outer circumference of the plasma-generating tubeat the downstream end of the first CCP electrode. A thin connecting tubeextending from the bottom of the plasma-generating tubeis inserted into the supply tube

Radical generator and molecular beam epitaxy apparatus

The production apparatus includes a shower head electrode, a susceptor for supporting a growth substrate, a first gas supply pipe, and a second gas supply pipe. The first gas supply pipe has at least one first gas exhaust outlet and supplies an organometallic gas containing Group III metal as a first gas, and the second gas supply pipe supplies a gas containing nitrogen gas as the second gas. The distance between the shower head electrode and the susceptor is greater than the distance between the first gas exhaust outlet of the first gas supply pipe and the susceptor.

Apparatus and method for producing group III nitride semiconductor device and method for producing semiconductor wafer

In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

Semiconductor light-emitting element

In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

A group III nitride underlayer including at least Al, having a dislocation density of &#x2266;1&#xd7;10/cmand a (002) plane X-ray rocking curve half-width value of &#x2266;200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is &#x2267;50% and in which a carrier density is &#x2267;1&#xd7;10/cm. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of &#x2267;50%.

Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method

An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device has an underlayer made of nitride semiconductor containing Al and a dislocation density of 10 /cm or less. The device further has an n-type conductive layer and p-type conductive layer each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1&times;10 /cm or less. The device still further has a light emitting layer composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1&times;10 /m or less, as well.

Semiconductor light-emitting devices

An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 10 /cm or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 10 /cm or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

Semiconductor element

A III nitride buffer film including at least Al element and having a screw-type dislocation density of 1&times;10 /cm or less is formed on a base made from a sapphire single crystal, etc., to fabricate an epitaxial base substrate. Then, a III nitride underfilm is formed on the III nitride buffer film, to fabricate an epitaxial substrate.

Epitaxial base substrate and epitaxial substrate

A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.

Light-emitting element

A lower region having a composition of Al Ga In N (x1&plus;x2&plus;x3&equals;1, 0.5&lE;x1&lE;1.0) is formed through epitaxial growth by a CVD method, and subsequently, an upper region having a composition of Al Ga In N (y1&plus;y2&plus;y3&equals;1, 0&lE;y1&lE;x1&minus;0.1) is formed through epitaxial growth by a CVD method. A boundary face divides a given III nitride film into the lower region and the upper region and the lower and upper regions have an Al content difference of 10 atomic percent or more.

Method for fabricating a nitride film

A semiconductor element includes a conductive SiC base having a resistivity of less than 1&times;10 &OHgr;cm, an underlayer made of a semiconductor nitride including at least Al element which is formed on the SiC base, and a semiconductor nitride layer group made including at least one of Al element, Ga element and In element.

In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer is made of a semiconducting nitride material including it least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements. The light-emitting layer can be omitted if at least one element selected from rare earth metal elements is incorporated in the underlayer.

In a semi-conductor light-emitting element, an underlayer is made of a high crystallinity Al-including semi-conducting nitride material of which the FWHM is 90 second or below in X-ray rocking curve. Then, a light-emitting layer is made of a semi-conducting nitride material including at least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements and transition metal elements.

Growing community of inventors

Nishikasugai-gun, Japan

Osamu Oda