Kabushiki Kaisha Toshiba

Asahi Kasei Kogyo Kabushiki Kaisha

Asahi Kasei Kabushiki Kaisha

Osamu Nagano

Yuichiro Yamazaki

Atsushi Ando

Susumu Hashimoto

Motosuke Miyoshi

Hisashi Kaneko

Tetsuo Matsuda

Toru Watanabe

Hidenori Hinago

Kunitoshi Aoki

Satoru Komada

Ken Someya

Hideo Midorikawa

Kiyoshi Kawakami

Toyozi Tanabe

A defect inspection method includes generating and applies a charged beam to a sample with patterns; controlling a shape of the charged beam so that a beam width in a first direction perpendicular to an optical axis differs from a beam width in a second direction perpendicular to the optical axis and the first direction, while substantially maintaining a cross-sectional area of the beam; scanning the sample with the charged beam having the controlled shape; and detecting charged particles from the sample by irradiation of the charged beam and detects a defect of the patterns. Assuming that the beam width of the charged beam in the first direction is smaller than that in the second direction, the first direction is set to a direction in which an interval between adjacent patterns becomes a minimum value and the sample is scanned in the second direction.

Defect inspection apparatus, defect inspection method, and semiconductor device manufacturing method

A pattern inspection method includes scanning a substrate on which patterns are formed with a charged beam, detecting a charged particle generated from the surface of the substrate, and then acquiring an image of the patterns; comparing the image of the patterns with CAD data for the patterns to inspect the patterns; measuring the dimensions of an arbitrary pattern using the image; calculating a statistic of a dimensional value of the arbitrary pattern obtained by the measurement; judging the necessity of a correction on the basis of the calculated statistic; and performing correction processing when the correction is judged to be necessary.

Pattern inspection method, pattern inspection apparatus and semiconductor device manufacturing method

A pattern inspection method includes: acquiring an image of a pattern; performing matching of CAD data for the pattern and the image; extracting coordinates of a plurality of points on a line segment constituting a polygon figure in the CAD data, to be defined as a first coordinate group; specifying coordinates of edge points in the image corresponding to the plurality of points to be defined as a second coordinate group; calculating differences between the coordinates corresponding to each other from the first and second coordinate group, and calculating statistics each representing a degree of deviation in the matching based on the differences; correct the polygon figure when it is determined that a correction is required as a result of judgment based on the statistics; and inspecting the pattern by comparing the corrected polygon figure with the image.

Pattern inspection apparatus, pattern inspection method, and manufacturing method of semiconductor device

A charged particle beam apparatus includes a column, the column having: a charged particle beam source which generates a charged particle beam to apply a charged particle beam to the surface of a substrate, a position where the charged particle beam is irradiated to the substrate being a beam position; and a gas mechanism provided in proximity to the substrate to supply a gas to the surface of the substrate, the gas mechanism having an opening which permits passage of the charged particle beam, a gas supply opening which locally injects the gas to the vicinity of the beam position, and a gas exhaust opening which exhausts the injected gas in the vicinity of the beam position to exhaust the gas.

Charged particle beam apparatus, defect correcting method, etching method, deposition method, and charge preventing method

A method of inspecting an interconnection pattern formed by depositing a metal onto a substrate having an interconnection pattern groove formed on a surface thereof includes: selectively measuring a thickness of a part above the substrate of a metal film formed on the substrate, the part above the substrate being a part constituted of the metal deposited upward from substantially the same surface as the surface of the substrate on which an interconnection pattern groove is formed; and evaluating how successfully the interconnection pattern groove is filled with the metal on the basis of a film thickness value obtained by the selective measurement.

Interconnection pattern inspection method, manufacturing method of semiconductor device and inspection apparatus

A charged particle beam apparatus includes: a charged particle beam generator which generates a charged particle beam; a projection optical system which generates a lens field to focus the charged particle beam on an external substrate; and deflectors arranged so as to surround an optical axis of the charged particle beam; the deflectors generating a deflection field which is superposed on the lens field to deflect the charged particle beam and to control a position to irradiate the substrate, and being configured so that intensity of the deflection field in a direction of the optical axis is changed in accordance with an angle with which the charged particle beam should fall onto the substrate.

Charged particle beam apparatus, charged particle beam control method, substrate inspection method and method of manufacturing semiconductor device

A charged beam exposure apparatus includes: a first shaping aperture provided with a plurality of rectangular openings which are different from each other in at least one of area and shape thereof; a second shaping aperture provided with a pattern having a shape corresponding to that of a pattern to be drawn onto a substrate; a charged beam generator which generates a charged beam to apply the charged beam to the first shaping aperture; a projector which projects the charged beam that has passed through an arbitrary opening of the first shaping aperture onto the second shaping aperture; a deflection unit provided between the charged beam generator and the projector to deflect the charged beam; a deflection controller which controls the deflection unit so that the opening of the first shaping aperture is selected which enables adjustments of a drawing time and a resolution conforming to requirements/specifications of the pattern to be drawn; and a demagnification projector which projects the charged beam that has passed through the second shaping aperture onto the substrate in a demagnification form.

Charged beam exposure apparatus, charged beam control method and manufacturing method of semiconductor device

A charged particle beam lithography system includes: a charged particle beam source which generates a charged particle beam and irradiates a substrate therewith; an aperture in which has been formed a pattern of a shape corresponding to an arbitrary pattern to be drawn; an illuminator which adjusts the diameter of the charged particle beam and illuminates the aperture with the charged particle beam; a first deflector which deflects the charged particle beam by an electrical field to cause the charged particle beam to be incident on an arbitrary pattern, allowing the charged particle beam to pass through the aperture and be reflected back along the optical axis; a first demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has passed through the aperture with the use of an electrical field or electromagnetic field; a second demagnification optical projection system which demagnifies the aperture image of the charged particle beam which has been demagnified by the first demagnification projection optical system, with the use of an electrical field or electromagnetic field to form an image on the substrate; and a beam diameter adjuster which adjusts the illuminator in such a manner that the beam diameter at crossovers of the charged particle beam, formed between the aperture and the first demagnification optical projection system and within the second demagnification optical projection system, is greater than the size of the pattern.

Charged particle beam lithography system, pattern drawing method, and method of manufacturing semiconductor device

A charged particle beam apparatus includes: a charged particle beam source which generates a charged particle beam to irradiate the charged particle beam onto a specimen; a demagnification optical system which demagnifies the charged particle beam; a deflector which deflects the charged particle beam to scan the specimen; and a first charged particle detector having a detection surface to detect a charged particle generated from the specimen which has been irradiated with the charged particle beam; wherein the detection surface of the first charged particle detector is disposed so as to face towards the charged particle beam source.

Charged particle beam apparatus, charged particle detection method, and method of manufacturing semiconductor device

Disclosed is an oxide catalyst comprising an oxide represented by the formula MoVNbXYZQO(wherein: X is at least one element selected from the group consisting of Te and Sb; Y is at least one element selected from the group consisting of Al and W; Z is at least one element selected from the group consisting of elements which individually form an oxide having a rutile structure and a Z oxide having a rutile structure is used as a source of Z for producing the catalyst; Q is at least one element selected from the group consisting of titanium, tin, germanium, lead, tantalum, ruthenium, rhenium, rhodium, iridium, platinum, chromium, manganese, technetium, osmium, iron, arsenic, cerium, cobalt, magnesium, nickel and zinc, and a Q compound not having a rutile structure is used as a source of Q for producing the catalyst; and a, b, c, d, e, f and n are, respectively, the atomic ratios of V, Nb, X, Y, Z, Q and O, relative to Mo). Also disclosed is a process for producing an unsaturated carboxylic acid or an unsaturated nitrile by using the above-mentioned oxide catalyst.

Catalyst for use in catalytic oxidation or ammoxidation of propane or isobutane in the gaseous phase

A charged particle beam lithography system includes a charged particle beam emitter which emits a charged particle beam to a wafer at an acceleration voltage lower than a voltage causing a proximity effect; an illumination optical system which adjusts a beam radius of the charged beam; a cell aperture having a cell pattern corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field to enter a desired cell pattern of the cell aperture; a demagnification projection optical system which demagnifies the charged particle beam form the cell aperture with a second electric field to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer.

Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device

A charged particle beam exposure system comprising: a charged particle beam emitting device which generates charged particle beams with which a substrate is irradiated, the charged particle beam emitting device generating the charged particle beams at an accelerating voltage which is lower than that at which an influence of a proximity effect occurs; an illumination optical system which adjusts a beam diameter of the charged particle beams so that density of the charged particle beams is uniform; an character aperture in which an aperture hole is formed in a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beams by an electrostatic field that the charged particle beams have a desired sectional shape and travel towards a desired aperture hole and which returns the charged particle beams passing through the aperture hole to an optical axis thereof; a reducing projecting optical system which forms a multi-pole lens field so that the charged particle beams passing through the character aperture substantially reduce at the same demagnification both in X and Y directions when the optical axis extends in Z directions and form an image on the substrate without forming any crossover between the character aperture and the substrate; and a second deflector which deflects the charged particle beams passing through the character aperture by means of an electrostatic field to scan the substrate with the charged particle beams.

Charged particle beam exposure system

A thickness measuring system comprises: an eddy current loss measuring sensor having an exciting coil for receiving a high frequency current to excite a high frequency magnetic field to excite an eddy current in a conductive film, and a receiving coil for outputting the high frequency current which is influenced by an eddy current loss caused by the eddy current; an impedance analyzer for measuring the variation in impedance of the eddy current loss measuring sensor, the variation in current value of the high frequency current or the variation in phase of the high frequency current on the basis of the high frequency current outputted from the receiving coil; an optical displacement sensor for measuring the distance between the conductive film and the eddy current loss measuring sensor; and a control computer including a thickness calculating part for calculating the thickness of the conductive film on the basis of various measured results of the impedance analyzer and optical displacement sensor, and the eddy current loss measuring sensor further has a ferrite member surrounding the exciting coil and the ferrite member has an opening in the bottom surface portion thereof for allowing the exciting coil to be exposed.

Growing community of inventors

Yokohama, Japan

Osamu Nagano