Kokusai Electric Co., Ltd.

Osamu Matsumoto

Sadayuki Okudaira

Hideo Komatsu

Motoichi Kanazawa

Haruhisa Kinoshita

Harunobu Sakuma

A dry process system comprising a chamber having an inlet for reaction gas and an exhaust port for exhaust gas, at least one pair of electrodes connected with an alternating current power source through a blocking capacitor, respectively, and one or more magnetic field applying means for generating a magnetic field nearly parallel to a surface of each electrode. The distance between adjacent electrodes is set to the extent that electrons can travel nearly without collision in the space between the adjacent electrodes. Since the distance between adjacent electrodes is narrow, one plasma generated in the neighborhood of one of the adjacent electrode and the other plasma generated in the neighborhood of another electrode can commingle with each other so that the distribution of plasma is made nearly equal, thus a nearly uniform plasma can be formed without a rotating magnetic field.

Dry process system

A plurality of resist membranes are formed on a membrane of goods to be etched. The top resist is patterned by light beam, laser beam, X-rays, or electron beams. The wafer is transferred to a first unit into which discharging gas is introduced and plasma is generated in order to dry-etch the multilayer resists. The multilayer is transferred to a second unit in vacuum environment. In the second unit, the membrane of the wafer is dry-etched in a predetermined depth. The wafer then is transferred to a third unit in vacuum atmosphere so as to remove part of the resist depending a mask pattern and treat the resist by plasma.

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Akishima, Japan

Osamu Matsumoto