Applied Materials Israel Limited

Ori Shoval

Yoram Uziel

Ishai Schwarzband

Roman Kris

Ofer Adan

Yakov Weinberg

Moshe Langer

Ran Goldman

Yan Ivanchenko

Efrat Noifeld

Dan Lange

Arbel Englander

Ram Peltinov

A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.

CD-SEM technique for wafers fabrication control

A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.

High electron energy based overlay error measurement methods and systems

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Ashdod, Israel

Ori Shoval