Infineon Technologies Ag

Daimler Chrysler Ag

Oliver Nagler

Marianne Unterreitmeier

Ivan Penjovic

Bernd Goller

Helmut Seidel

Ulrich Prechtel

Wolfgang Stadler

Robert Bauer

Matthias Aikele

Sebastian Bernrieder

Werner Ertle

Till Frohnmüller

Reinhard Greiderer

Olaf Schmeckebier

Josef Martin Paul Hennig

Karl K&uuml;hl

A system and method for the acoustic detection of cracks in a semiconductor substrate is disclosed. In one example, the system includes a force generating unit configured to apply a force onto the semiconductor substrate, a detector unit comprising a resonating indenter and an acoustic emission sensor coupled to the resonating indenter, and an evaluation unit configured to evaluate acoustic signals detected by the detector unit and configured to determine whether a crack has occurred based on the detected signals. The resonating indenter is configured to contact the semiconductor substrate at a lateral distance from the force generating unit, and wherein the force generating unit and the resonating indenter are configured to contact the semiconductor substrate on the same side.

System and method for the acoustic detection of cracks in a semiconductor substrate

A system for examining semiconductor substrates may comprise an indenter configured to exercise a force onto the semiconductor substrate such that a crack in the semiconductor substrate occurs, a piezoelectric acoustic emission sensor configured to detect an acoustic signal emitted by the crack, and attaching means configured to fasten the indenter to a first surface of the piezoelectric acoustic emission sensor. The indenter and the attaching means are configured to transmit the acoustic signal to the piezoelectric acoustic emission sensor. The resonance frequencies of the indenter and the piezoelectric acoustic emission sensor are attuned to one another.

System and method for examining semiconductor substrates

A method of determining a minimum permissible tip diameter of probing needles of a probe card for wafer probing is described. The method includes performing a plurality of contact procedures of at least one probing needle to a plurality of bonding pads on a wafer. The plurality of contact procedures is performed at different stress applied by the at least one probing needle to the bonding pads. A chart of indentation depths of the plurality of bonding pads caused by the contact procedures at different stress is determined. A set of calibration coefficients based on the chart is determined, wherein the set of calibration coefficients allows to compute a predicted indentation depth as a function of stress. The minimum permissible probing needle tip diameter is determined based on an evaluation of the function.

Wafer probing

A method in accordance with various embodiments may include: measuring a contact force between at least one probe and at least one contact pad for a plurality of probe overdrive positions, and determining a relationship between contact force and probe overdrive position from the measured contact forces; determining a first region in the relationship exhibiting a non-linear dependence of the contact force from the probe overdrive position, and a second region exhibiting a linear dependence of the contact force from the probe overdrive position; and determining a process window for a pad probing process based on the determined first region and second region.

Probe-pad qualification

An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least&#x2014;part of the semiconductor element. Below the surface of the pad metal, at least the top two metal layers include two or more adjacent interconnects.

Semiconductor structure integrated under a pad

A microsensor with a resonator structure, which is excited by first electrical signals to oscillate and emits second electrical signals in dependence on the measuring variable, wherein a heating element, supplied with at least one of the first electrical signals, is arranged on the resonator structure for the thermal excitations of oscillations. For the thermal excitation of lateral oscillations in a microsensor with a resonator structure, the microsensor is provided at one oscillating part of the resonator structure with at least two regions that are thermally separated by a zone with reduced heat conductance, and the heating element is arranged on one of the regions. This type of arrangements permits the excitation of the resonator structure to lateral oscillations if the heating element is supplied with corresponding current pulses. It is advantageous if a receiving element is arranged on at least one of the other regions to detect the oscillation amplitude.

Microsensor with a resonator structure

Growing community of inventors

Munich, Germany

Oliver Nagler