Applied Materials Israel Limited

Carl-zeiss-smt Ag

Carl Zeiss Nts Gmbh

Carl Zeiss Microscopy Gmbh

Carl Zeiss Sms Ltd.

Applied Materials Isreal Ltd

Carl Ziess Smt Ag

Carl Zeiss Smt Gmbh

Oliver Kienzle

Rainer K Knippelmeyer

Stephan Uhlemann

Thomas Kemen

Antonio Casares

Heiko Mueller

Maximilian Haider

Steven Robert Rogers

Heiko Müller

Axel Zibold

Max Haider

Thomas Scheruebl

Michael Steigerwald

Wolfgang Harnisch

Norbert Rosenkranz

Dirk Stenkamp

Rigo Richter

Holger Weigand

Peter Kuschnerus

Yuji Kobiyama

Alexander Orchowski

Ingo Müller

Maximillian Haider

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion. In such a method, the imaging properties are analyzed in that, for each defect to be improved, a test variable is determined for the defect as a function of focus and illumination, and at least one additional non-defective point on the phase shift mask in the immediate vicinity of the defect is determined, and a minimum allowable deviation between the test variable for the defect and the non-defective point is predetermined as the tolerance criterion.

Method for repairing phase shift masks

The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

Method and apparatus for analyzing a group of photolithographic masks

A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

Method and arrangement for repairing photolithography masks

An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

An electron microscopy system comprises an objective lens () which images a field displaceable in x-direction on a fixed beam axis (). The objective lens has an astigmatic effect which is compensated for by a beam shaper () on the fixed axis. Furthermore, lens configurations can selectively act on the primary electron beam or the secondary electron beam.

Beam guiding arrangement, imaging method, electron microscopy system and electron lithography system

A projection apparatus for imaging a pattern of a mask onto a substrate by means of a beam of projected charged particles is disclosed. The apparatus includes a radiation sensitive layer. The apparatus also includes a mask. The mask includes a membrane layer made of a first material, scattering regions forming the pattern and made of a second material scattering the charged particles more than the membrane layer, and a plurality of straightly extending supporting struts spaced apart from one another and supporting the membrane layer together with the scattering regions. The apparatus also includes a projection apparatus. The projection apparatus includes a beam shaping device for producing the projection beam with a predetermined projection beam cross-section in the mask plane, and a positioning device for moving the projection beam cross-section in the mask plane along a predetermined path over the mask parallel to the direction into which the struts extend. The apparatus also includes a sensor for supplying a measuring signal which is dependent on the number of charged particles impinging on a mark region provided on the mask.

Apparatus and method for exposing a radiation sensitive layer by means of charged particles as well as a mask for this purpose

A method for the electron-microscopic observation of a semiconductor arrangement is provided. It includes providing an electron microscopy optics for imaging secondary electrons emanating from the semiconductor arrangement within an extended object field on a position-sensitive detector, providing an illumination device for emitting a primary energy beam, directing the primary energy beam to at least the object field for extracting there secondary electrons from the semiconductor arrangement. The semiconductor arrangement comprises a region with an upper surface provided by a first material and a recess with a high aspect ratio which is surrounded by the upper surface and has a bottom provided by a second material.

Method for the electron-microscopic observation of a semiconductor arrangement and apparatus therefor

A particle-optical apparatus is disclosed which combines the functions of an energy selectorand a beam splitterThe particle-optical apparatus is used in an electron microscopy system and serves to separate and superimpose, respectively, beam paths of a primary electron beamand a secondary electron beam

Electron microscopy system

A particle-optical apparatus is provided for directing a beam of charged particles on an object plane or to image the object plane with the beam onto an image plane or intermediate image plane. The apparatus comprises a stack of lens assemblies which are disposed in beam direction at a fixed distances spaced apart from which other and are controllable for providing successively adjustable deflection fields for a beam traversing the stack. Each lens assembly provides at least one field source member for a magnetic or electric field. In particular, two rows of a plurality of field source members per lens assembly can be provided.

Particle-optical apparatus, electron microscopy system and electron lithography system

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Jena, Germany

Oliver Kienzle