Globalfoundries Inc.

Advanced Micro Devices Corporation

Obert Reeves Wood, Ii

Lei Sun

Harry Jay Levinson

Thomas Ingolf Wallow

Ryoung-han Kim

Yulu Chen

Francis Goodwin

Jed Hickory Rankin

Bruno M LaFontaine

Genevieve Beique

Erik Verduijn

The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

Extreme ultraviolet (EUV) lithography mask

Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

Extreme ultraviolet mirrors and masks with improved reflectivity

Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Pellicle with aerogel support frame

A novel blazed grating spectral filter disclosed herein includes a multilayer stack of materials that is formed on a wedge-shaped substrate wherein the upper surface of the substrate is oriented at an angle relative the bottom surface of the substrate and wherein the angle corresponds to the blaze angle of the blazed grating filter. Various methods of forming such a filter are also disclosed such as, for example, performing a planarization process in a CMP tool to define the wedge-shaped substrate, thereafter forming the multilayer stack of materials above the upper planarized surface of the substrate and etching recesses into the multilayer stack.

Blazed grating spectral purity filter and methods of making such a filter

Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.

Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask

A scattering enhanced thin absorber for a EUV reticle and a method of making thereof is disclosed. Embodiments include forming a multilayer on the upper surface of a substrate, forming a capping layer over the multilayer, forming one or more diffuse scattering layers over the capping layer, and etching the diffuse scattering layers to form a stack.

Scattering enhanced thin absorber for EUV reticle and a method of making

A method of determining a dose-to-clear of a photoresist on a wafer includes providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed, transforming the image of the wafer into frequency spectrum data, calculating an average frequency spectrum component of the frequency spectrum data, calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum, and determining a dose-to-clear of the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.

Methods and systems for determining a dose-to-clear of a photoresist

According to one exemplary embodiment, a laser beam formatting module for use in a lithographic system to fabricate a semiconductor wafer comprises an aperture plate having, for example, a circular aperture and capable of being situated between a laser source and a target, and a lens assembly, in a light path between the aperture plate and the target. The laser beam formatting module can produce a substantially uniform laser beam intensity across a target during fabrication of a semiconductor wafer in a laser-produced plasma (LPP) lithographic process using, for example, extreme ultraviolet light (EUV). In one embodiment, a laser beam formatting module improves energy conversion efficiency, reduces out-of-band radiation emission, avoids heating of reflective optics, and eliminates the need for an out-of-band radiation filter.

Laser beam formatting module and method for fabricating semiconductor dies using same

One exemplary embodiment is a method for detecting existence of an undesirable particle between a planar lithographic object, such as a semiconductor wafer or a lithographic mask, and a chuck during semiconductor fabrication. The exemplary method in this embodiment includes placing the planar lithographic object, such as the semiconductor wafer, over the chuck. The method further includes measuring a change in at least one electrical characteristic formed by and between the chuck and the planar lithographic object, such as measuring a change in capacitance between the chuck and semiconductor wafer, caused by the undesirable particle.

Method and system for detecting existence of an undesirable particle during semiconductor fabrication

According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the aerogel film over the lithographic mask. The aerogel film causes the pellicle to have increased EUV light transmittance.

EUV pellicle with increased EUV light transmittance

Carbon contamination of optical elements in an exposure tool is minimized by incorporating a hydrocarbon getter. Embodiments include EUV lithography tools provided with at least one hydrocarbon getter comprising a substrate and a high energy source, such as an electron gun or separate EUV source, positioned to direct an energy beam, having sufficient energy to crack heavy hydrocarbons and form carbon, on the substrate. Embodiments also include exposure tools equipped with a hydrocarbon getter comprising an energy source positioned to impinge a beam of energy on a quartz crystal thickness monitor, a residual gas analyzer, and a controller to control the electron-current and maintain the amount of hydrocarbons in the system at a predetermined low level.

Hydrocarbon getter for lithographic exposure tools

According to one exemplary embodiment, an extreme ultraviolet (EUV) source collector module for use in a lithographic tool comprises an EUV debris mitigation filter. The EUV debris mitigation filter can be in the form of an aerogel film, and can be used in combination with an EUV debris mitigation module comprising a combination of conventional debris mitigation techniques. The EUV debris mitigation filter protects collector optics from contamination by undesirable debris produced during EUV light emission, while advantageously providing a high level of EUV light transmittance. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a discharge-produced plasma (DPP) light source. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a laser-produced plasma (LPP) light source.

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Loudonville, NY, United States of America

Obert Reeves Wood, Ii