Other

Hitachi-Kokusai Electric Inc.

Max-Planck-Gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Tohoku Techno Arch Co., Ltd.

Adtec Plasma Technology Co., Ltd.

Noriyoshi Sato

Satoru Iizuka

Yunlong Li

Yoshio Tominaga

Masanobu Sato

Unryu Ogawa

Gregor Eugen Morfill

Yukito Nakagawa

Tetsuji Shimizu

Shuitsu Fujii

Uwe Konopka

Timo Stuffler

Hubertus M Thomas

Takeshi Taniguchi

Tsukasa Yoneyama

Hiroyasu Sato

Tamiya Fujiwara

Giichiro Uchida

Hiroshi Mase

Yoichiro Numazawa

Martin Fink

Beatrice Annaratone

Wolfgang Jacob

Gregor Morfill

A method for the operation of a plasma device () is described in which particles () are arranged in a plasma, wherein a generation of electric travelling waves () is provided, under whose effective action the particles () in the plasma device () perform a directed movement to at least one pre-determined collection area (A). A plasma device for carrying out the method is also described.

Method and device for the operation of a plasma device

To provide a generator capable of generating plasma and ozone with high efficiency and easy to handle, with a simple structure. An electrode partis formed of electrodesandwithout dielectric material interposed therebetween. An arc-extinguishing capacitoras a charge storage part for storing charge is connected in series to the electrode part. An AC power sourcegenerating plasma by causing self-arc-extinguishing discharge between the electrodesandby applying AC voltage to charge and discharge the arc-extinguishing capacitor, is connected to both ends of a circuit in which the electrode partand the arc-extinguishing capacitorare connected in series. The arc-extinguishing capacitorand one electrodeof the electrode partconnected thereto are unitized, for making the electrode part multi-polarized. A unit is constituted of a floating electrode serving as both of the one electrodeof the electrode partand one electrode of the arc-extinguishing capacitor, an insulating material provided around the floating electrode and a grounding electrode provided around the insulating material.

Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device

An apparatus for processing particulate dust when a substrate is arranged in a high vacuum enclosure, plasma is generated in the high vacuum enclosure, and a reactive material is introduced into the high vacuum enclosure to perform processing of the substrate. At least one collecting electrode is provided around the substrate in the high vacuum enclosure other than the electrode that generates plasma, and particulates generated in plasma are efficiently removed by applying a predetermined electric potential of a direct-current or an alternating current to the collecting electrode, and thus a deposition problem onto an inner wall of the vacuum enclosure and a deterioration problem of processing accuracy and a film quality associated with flowing of the particulates onto the substrate are solved.

Method and apparatus for processing fine particle dust in plasma

The object of the present invention is to make possible generation of high-density plasma even in the center of a plasma generation region. A plasma generation apparatus comprises a vacuum vessel , gas induction unit , exhaust unit , cylindrical discharge electrode , high-frequency oscillators and , ring-shaped permanent magnets and , and two disk-shaped walls and . The discharge electrode is fashioned so as to enclose a plasma generation region . The permanent magnets and form prescribed magnetic force lines. These magnetic force lines have portions that are roughly parallel to the center axis of the discharge electrode , the lengths of which parallel portions become longer as the magnetic force lines approach the center axis . The two walls and define the scope of the plasma generation region in the dimension of the center axis of the discharge electrode . These two walls and are positioned so as to sandwich therebetween the plasma generation region in the dimension of the center axis . The plasma generation apparatus is also configured so that the magnetic force lines passing through the center of the plasma generation are shaped so that they do not intersect the two walls and

Plasma generation apparatus

A plasma generating apparatus and processing method, which generate high-density plasma, even in the central portion of the plasma generating zone. The apparatus comprises rectangular electrodes, a rectangular fistulous discharge electrode which surrounds the plasma generating zone, and a vacuum chamber of rectangular cross-section. Permanent magnets surround the discharge electrode, produce predetermined magnetic lines of force with portions which extend approximately parallel to the central axis of discharge electrode. A pair of parallel plate electrodes define the extension of the plasma generating zone in the direction of the central axis of the discharge electrode. The apparatus is configured such that the magnetic lines of force passing through the central portion of the plasma generating zone do not intersect with the electrodes.

Plasma generating apparatus and semiconductor manufacturing method

A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power. Due to this, processing of a large area substrate becomes possible.

Plasma processing system

Growing community of inventors

Sendai, Japan

Noriyoshi Sato