Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Other

Hitachi, Ltd.

Noritsugu Takahashi

Muneyuki Fukuda

Naomasa Suzuki

Tomoyasu Shojo

Yasunari Sohda

Hajime Kawano

Atsuko Fukada

Mitsugu Sato

Takeyoshi Ohashi

Hidetoshi Nishiyama

Hiroyuki Ito

Minoru Yamazaki

Yuko Sasaki

Makoto Sakakibara

Wataru Mori

Tasuku Yano

Hideo Todokoro

Hiroshi Suzuki

Makoto Suzuki

Hiroshi Makino

Akira Ikegami

Makoto Ezumi

Masahiro Aoki

Kenji Obara

Hiroshi Sato

Osamu Komuro

Tomonobu Tsuchiya

Satoshi Takada

Masashi Sakamoto

Daisuke Bizen

Takafumi Miwa

Takeshi Kitatani

Tomohiro Funakoshi

Yuzuru Mizuhara

Kazunari Asao

Junko Konishi

Yuta Kawamoto

Hirohiko Kitsuki

Manabu Yano

Kaori Bizen

Atsuko Shintani

Fumiaki Endo

Hikaru Koyama

Yuko Kariya

A charged particle beam device capable of generating an image having uniform image quality in a field of view is provided. The charged particle beam device includes: a beam source configured to irradiate a sample with a charged particle beam; a diaphragm including an opening used for angle discrimination of secondary charged particles emitted from the sample; a first detector provided closer to the sample than the diaphragm, and configured to detect a part of the secondary charged particles; a second detector provided closer to the beam source than the diaphragm, and configured to detect secondary charged particles passing through the opening; an image generation unit configured to generate an image based on a first signal output from the first detector or a second signal output from the second detector; and a composite ratio calculation unit configured to calculate a composite ratio for each position in a field of view based on the first signal or the second signal with respect to a calibration sample that is a sample having a flat surface. The image generation unit generates a composite image by synthesizing the first signal and the second signal with respect to an observation sample using the composite ratio.

Charged particle beam device

An inspection device includes a charged particle optical system that includes a charged particle beam source emitting a charged particle beam and plural lenses focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by an interaction of the charged particle beam and the sample, and a calculation unit that executes auto-focusing at a time a field of view of the charged particle optical system moves over plural inspection spots, the calculation unit irradiates the charged particle beam to the sample under an optical condition that is obtained by introducing astigmatism of a predetermined specification to an optical condition that is for observing a pattern by the charged particle optical system, and executes the auto-focusing using an image formed from a signal outputted by the detector in detecting the secondary charged particles.

Inspection device

An object of the invention is to correct an aberration or a defocus of an electron beam for irradiation, and control an influence on a deflector by a fluctuation in an electric field of an electrostatic lens. The invention provides a charged particle beam apparatus including a deflector that deflects a charged particle beam with which a specimen is irradiated, an objective lens that focuses the charged particle beam on the specimen, an electrostatic lens that includes a part of the objective lens and to which a voltage for correcting the aberration or the defocus of the charged particle beam is applied, and an constant electric field applying electrode that is provided between the deflector and the electrostatic lens and to which a constant voltage having a same sign with the voltage applied to the electrostatic lens is applied.

Charged particle beam apparatus

A measuring device for measuring a sample by emitting a charged particle beam includes a particle source, an electronic lens, a detector, a stage, a sensor for measuring the environment, and a control device, in which the control device includes a control module having a height calculation module configured to calculate a height estimation value indicating an estimated height of the sample at a measurement position; and a correction value calculation module configured to calculate a correction value reflecting a change of the environment based on the measurement position of the sample and an amount of change of the environment measured by the sensor, and the control module corrects the height estimation value based on the correction value, and sets a control value for controlling focus adjustment using the electronic lens based on the corrected height estimation value.

Measuring device and measuring method

The present invention enlarges a range of movement of field of view by beam deflection with a simple deflector configuration and suppresses deterioration of a signal electron detection rate caused by the beam deflection. A scanning electron microscope according to the present invention is provided with a first deflection field setting module that sets plural deflectors to move a scanning area on a specimen by a primary electron beam to a position deviated from an axis extended from an electron source toward the center of an objective lens and a second deflection field setting module that sets the plural deflectors so that trajectories of signal electrons are corrected without changing the scanning area set by the first deflection field setting module. The control unit controls the plural deflectors by adding a setting value set by the second deflection field setting module to a setting value set by the first deflection field setting module.

Scanning electron microscope

A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.

A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter () is arranged between a detector and a lens () arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device () is provided for the interlocked control of the Wien filter () and a lens () arranged on the charged-particle-source side among the two stages of lenses.

Charged-particle-beam device

This charged-particle beam device changes conditions for combining an intensity ratio between upper and lower deflectors and rotation angles of the deflectors in multiple ways when obtaining images having different pixel sizes in the vertical and horizontal directions. Then, the charged-particle beam device determines an optimal intensity ratio between the upper and lower deflectors and rotation angles of the deflectors on the basis of variations in size value measured in the larger pixel size direction (Y-direction) of the image. As a result, it is possible to extend the field of view in the Y-direction while reducing deflection aberrations when measuring at high precision in the X-direction.

Charged-particle beam device

In order to provide a charged particle beam apparatus enabling reduction of deflecting coma aberration in cases such as where wide field-of-view scanning is carried out, a charged particle beam apparatus is provided with an electromagnetic objective lens and a stage on which a sample is placed, wherein the electromagnetic objective lens is provided with the following: a plurality of magnetic paths; an objective lens coil; an opening disposed so as to face the sample; an inner lens deflector disposed more on the objective lens coil side than the end of the opening.

A charged particle instrument including a controlling and operating unit for controlling a charged particle source, deflecting means, and focus changing means and making a data for an image by an electric signal detected by a detector, and a recording unit for preserving a correction coefficient registered at each image-acquisition, in which the controlling and operating unit acquires plural images while changing a focus, and controls an optical condition such that a landing angle of a charged particle beam becomes perpendicular when an image for measurement is acquired on the basis of a position shift amount of a mark in the image and a correction coefficient registered to the recording unit.

Charged particle instrument

A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.

Charged particle beam apparatus permitting high-resolution and high-contrast observation

A charged-particle-beam device is characterized in having a control value for an aligner coil () being determined by: a coil current and an electrode applied-voltage at a control value for objectives (), which is an electromagnetic-field superposition lens; a control value for image-shift coils (); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.

Charged-particle microscope

This charged particle beam microscope is characterized by being provided with selection means () for a measurement processing method for detected particles () and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons () emitted from a sample () and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

Charged particle beam microscope

The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.

Electron beam device

Growing community of inventors

Kokubunji, Japan

Noritsugu Takahashi