Kanto Kagaku Kabushiki Kaisha

Nihon Kohden Corporation

Kabushiki Kaisha Toshiba

Nec Electronics Corporation

Nec Corporation

Other

Sony Corporation

Sanyo Electric Co., Ltd.

Renesas Electronics Corporation

Nissan Chemical Industries Limited

Kanto Chemical Co., Inc.

Kanto Jangaku Kabushiki Kaisha

Toshiaki Yagi

Hihon Kohden Corporation

Norio Ishikawa

Hidehiro Hosaka

Kiyoto Mori

Hidemitsu Aoki

Shin Suda

Yumiko Abe

Takuo Oowada

Katsumi Nakaichi

Takuo Ohwada

Kaoru Ikegami

Tatsuya Suzuki

Hiroaki Tomimori

Kohei Ono

Kaori Watanabe

Tadashi Sasaki

Ryoichi Ochiai

Yoshiko Kasama

Hiroshi Tomita

Kenji Saito

Yuji Yamada

Kazuyuki Saito

Hiroshi Kawamoto

Hiroaki Yamada

Shinji Yamamori

Ryosuke Araki

Yoshihiro Uozumi

Atsushi Okuyama

Tsuyoshi Matsumura

Takahito Nakajima

Kazuhiko Takase

Masafumi Muramatsu

Kenichi Nakabeppu

Tiharu Kato

Kazumi Asada

Mikie Miyasato

Munetaka Haida

Yoshitaka Kinomura

Yukito Shinohara

Takao Shihoya

Taku Murata

Hideki Hijiya

Yukino Hagino

Masanori Suga

Hiroichi Nakamura

Keiichiro Kon

Shigeharu Yamanobe

Yutaka Murakami

Akihisa Yoshikawa

Fumihiro Morikawa

Hironori Kuroyone

Shigeaki Sonoda

A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). 

Positive resist processing liquid composition and liquid developer

As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed metal impurities is required. In addition, when a washing liquid is used, it cannot wash off metal impurities; therefore an acid washing process is required. The present invention provides an aqueous solution composition, which is an alkaline aqueous solution but is able to prevent adsorption of metal impurities, which also has cleaning capability. By means of an alkaline aqueous solution composition used for washing or etching a substrate, the composition comprising a chelating agent represented by the general formula (1): and an alkaline component, the adsorption of metal impurities on the substrate is prevented, and metal impurities adsorbed on the substrate are washed off.

Alkaline aqueous solution composition used for washing or etching substrates

A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

Manufacturing method for semiconductor device

A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.

Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process

A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

Photoresist residue remover composition and semiconductor circuit element production process employing the same

A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.

Composition for removing photoresist residue and polymer residue

The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.

Etching liquid composition

A method for cleaning a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees comprises contacting the semiconductor surface with a cleaning liquid composition including an aliphatic polycarboxylic acid, an organic solvent having a hydroxyl group and/or an ether group, an anionic surfactant and water.

Method for cleaning semiconductor substrate

Cleaning solution and manufacturing method for semiconductor device

There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

Washing liquid composition for semiconductor substrate

A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

Post-CMP washing liquid composition

The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials. The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.

Cleaning solution for substrates of electronic materials

A cleaning solution for a mask used in a vacuum vapor deposition step in the production of a low molecular weight organic EL device is provided, the cleaning solution including one type or two or more types of aprotic polar solvent. There is also provided a cleaning method for a mask used in a vacuum vapor deposition step in the production of a low molecular weight organic EL device, wherein cleaning is carried out by immersion or jet flow using the cleaning solution.

Cleaning solution and cleaning method for mask used in vacuum vapor deposition step in production of low molecular weight organic EL device

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Saitama, Japan

Norio Ishikawa