Sharp Kabushiki Kaisha Corporation

Norimasa Yafune

John Kevin Twynam

A field effect transistor includes a GaN epitaxial substrate, a gate electrode formed on an electron channel layer of the substrate, and source and drain electrodes arranged spaced apart by a prescribed distance on opposite sides of the gate electrode. The source and drain electrodes are in ohmic contact with the substrate. At an upper portion of the gate electrode, a field plate is formed protruding like a visor to the side of drain electrode. Between the electron channel layer of the epitaxial substrate and the field plate, a dielectric film is formed. The dielectric film is partially removed at a region immediately below the field plate, to be flush with a terminal end surface of the field plate. The dielectric film extends from a lower end of the removed portion to the drain electrode, to be overlapped on the drain electrode.

Field effect transistor

A semiconductor switching element, wherein on a semiconductor layer formed on a substrate, or on a semiconductor substrate, a source electrode and a drain electrode are disposed at a predetermined interval in a direction along a surface of the substrate; and a second gate electrode is provided between the source electrode and the drain electrode, the second gate electrode is electrically connected with the source electrode and structured with two types of electrode material layers having Schottky barriers of different heights from each other.

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Fukui, Japan

Norimasa Yafune