Hitachi, Ltd.

Norimasa Nishimura

Akira Shimase

Junzou Azuma

Michinobu Mizumura

Asahiro Kuni

Hidemi Koike

Yuichi Hamamura

Yasuhiro Koizumi

Masahiro Watanabe

Hiroshi Miyai

Taku Ninomiya

Hiroya Koshishiba

In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

Sample processing apparatus and method for removing charge on sample through light irradiation

In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

Method and apparatus for observing or processing and analyzing using a charged beam

A method and an apparatus for inspecting or measuring a sample based on charged-particle beam are provided to relieve charge-up of the sample, so that high-quality electron image is obtained. A UV light irradiation optical system is controlled by an irradiation controller, scanning of the charged-particle beam is controlled by a scanning controller, and the irradiation controller and the scanning controller are controlled by a general controller. They are mutually synchronized, and a signal from an electron detector is imaged by an image slicing circuit and an image processing circuit.

Method and apparatus for inspecting or measuring a sample based on charged-particle beam imaging, and a charged-particle beam apparatus

A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.

Method and its apparatus for detecting a secondary electron beam image and a method and its apparatus for processing by using focused charged particle beam

Growing community of inventors

Yokohama, Japan

Norimasa Nishimura