Sharp Kabushiki Kaisha Corporation

Norihisa Fujii

Masaru Kubo

Masayuki Fukumi

Tetsuzo Nagahisa

Hisao Ichijoh

A nitride semiconductor device includes a second insulating film () covering at least a drain electrode () and a thermal stress reducer that reduces thermal stress in a place where thermal stress that is generated between the drain electrode () and the second insulating film () reaches its maximum at the time of a load short. The thermal stress reducer () is a drain field plate portion () formed by an extension of an upper part of the drain electrode () toward a source electrode ().

Nitride semiconductor device

A heterojunction field effect transistor includes a first contact portion and a second contact portion. A length of the first contact portion in a longitudinal direction is smaller than a length of source electrodes in the longitudinal direction, and a length of the second contact portion in the longitudinal direction is smaller than a length of drain electrodes in the longitudinal direction. For each drain electrode, a distance from ends of the second contact portion to ends of the drain electrode, the ends being outside of the second contact portion, is greater than a distance from ends of the first contact portion to ends of the source electrode, the ends being outside of the first contact portion.

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Fukuyama, Japan

Norihisa Fujii