Toyota Jidosha Kabushiki Kaisha

Norihiro Togawa

Narumasa Soejima

Shoji Mizuno

A method of manufacturing a semiconductor device is provided with: implanting charged particles including oxygen into a surface of a SiC wafer; and forming a Schottky electrode that makes Schottky contact with the SiC wafer on the surface after the implantation of the charged particles.

Method of manufacturing semiconductor device

A manufacturing method for a semiconductor device includes introducing an impurity into a SiC substrate, forming a mixed material layer, which is made from a resin and a fibrous carbon material, on a surface of the SiC material into which the impurity is introduced, performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate, and removing the mixed material layer after the heat treatment.

Growing community of inventors

Nagoya, Japan

Norihiro Togawa