Jsr Corporation

Norihiko Sugie

Norihiro Natsume

Yukio Nishimura

Daita Kouno

Gouji Wakamatsu

Makoto Sugiura

Junichi Takahashi

Hiromitsu Nakashima

Kiyoshi Tanaka

Motoyuki Shima

Takahiro Hayama

Kazunori Kusabiraki

Yasuhiko Matsuda

Tomohiro Kakizawa

Yasutaka Kamei

Takakazu Kimoto

Pengyu Wang

Yuuya Yamada

Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

Composition for chemical-mechanical polishing and chemical-mechanical polishing method

A radiation-sensitive resin composition includes a polymer component, a radiation-sensitive acid generating agent, and a nitrogen-containing compound having a ring structure. The polymer component includes, in an identical polymer or different polymers, a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). Rrepresents a hydrogen atom or a methyl group. Z is a group which represents a divalent monocyclic alicyclic hydrocarbon group taken together with R. Rrepresents a carbon atom. Rrepresents a methyl group or an ethyl group. Rrepresents a hydrogen atom or a methyl group. X is a group which represents a divalent bridged alicyclic hydrocarbon group having no less than 10 carbon atoms taken together with R. Rrepresents a carbon atom. Rrepresents a branched alkyl group having 3 or 4 carbon atoms. 

Radiation-sensitive resin composition, polymer, and resist pattern-forming method

A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises [In the general formulas (1-1) and (1-2), Ris hydrogen or the like; Ris single bonds or the like; and Ris a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

Composition for formation of upper layer film, and method for formation of photoresist pattern

A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography. 

Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern

An upper-layer film-forming composition includes (A) a resin that is soluble in an alkaline aqueous solution, and includes a fluorine atom, and (B) a solvent component that includes (B1) a solvent having a boiling point at 101.3 kPa of 150&#xb0; C. or more and a static surface tension of 23.0 mN/m or less, the upper-layer film-forming composition being used to form an upper-layer film on a photoresist film.

Upper layer-forming composition and resist patterning method

The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), Rto Rindependently represent a hydrogen atom, &#x2014;OH, &#x2014;COOH or &#x2014;SOH, provided that all of Rto Ror Rto Rdo not represent a hydrogen atom in a molecule.) 

Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method

The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, Rrepresents hydrogen or methyl; Rand Reach represents methylene, linear or branched Calkylene, or alicyclic Calkylene; Rrepresents hydrogen or methyl; and Rrepresents a single bond, methylene, or linear or branched Calkylene.].

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Tokyo, Japan

Norihiko Sugie