Jsr Corporation

Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Norihiko Ikeda

Naoki Yasui

Kazuya Yamada

Hayato Namai

Isao Mori

Masaru Izawa

Masayuki Hattori

Nobuo Kawahashi

Koichi Yamamoto

Takanori Kawakami

Tooru Aramaki

Kazuo Nishimoto

Seiichi Watanabe

Eiji Hayashi

Hitoshi Tamura

Hiromitsu Nakashima

Hiroki Nakagawa

Kazuo Nakahara

Kazuki Kasahara

Yasuhiro Nishimori

Takuma Ebata

Yasuhiko Matsuda

Mutsuhiko Yoshioka

Kaori Sakai

Tomikazu Ueno

Shin-ichi Nakamura

Yutaka Kozuma

Hiroaki Takikawa

Kenji Hoshiko

Saki Harada

A plasma processing apparatus including a processing chamber including therein a sample stage on which a substrate to be processed is placed; a magnetic field generating unit configured to generate a magnetic field inside the processing chamber; a microwave power source configured to generate microwave power; microwave power transfer units configured to transfer the microwave power; and a microwave three-dimensional circuit unit configured to supply the transferred microwave power into a processing chamber via a dielectric window. The microwave three-dimensional circuit unit includes a branch circuit configured to branch the microwave power transferred by the microwave power transfer unit in a plurality of azimuth directions, a ring resonator configured to resonate the microwave power branched in the plurality of azimuth directions by the branch circuit, and a coaxial line configured to supply the microwave power resonated by the ring resonator into the processing chamber via the dielectric window.

Plasma processing apparatus

A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.

A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a controller. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The controller controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.

Plasma processing apparatus and plasma processing method

To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

Plasma processing apparatus and method

According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

A plasma processing apparatus includes a processing chamberwhere a waferis processed using plasma, a radio frequency power supplyconfigured to supply a radio frequency power for generating the plasma, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stageon which the waferis placed. The plasma processing apparatus further includes a control unitconfigured to, based on image data of the plasma, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.

Plasma processing apparatus, plasma processing method, and ECR height monitor

In a plasma processing apparatus, a placement electrode includes an inner peripheral electrode for electrostatically adsorbing a wafer and an outer peripheral electrode disposed outside the inner peripheral electrode for electrostatically adsorbing the wafer, and a DC power supply unit on which the wafer is placed supplies a first radio frequency power to the inner peripheral electrode via an inner peripheral transmission path. A DC power supply unit supplies a second radio frequency power having the same frequency as the frequency of the first radio frequency power to the outer peripheral electrode via an outer peripheral transmission path. An electromagnetic wave generating power supply supplies a third radio frequency power for generating plasma. A control device controls a phase difference between a phase of the first radio frequency power and a phase of the second radio frequency power so that a phase of a radio frequency voltage applied to the inner peripheral electrode and a phase of a radio frequency voltage applied to the outer peripheral electrode are equal.

An acid diffusion control agent includes a compound represented by a formula (1), a compound represented by a formula (2) or both thereof. Rrepresents a hydrocarbon group comprising a monovalent alicyclic structure, or the like. Rand Reach independently represent a monovalent hydrocarbon group, or the like. Rand Reach independently represent a monovalent hydrocarbon group, or the like. Rand Reach independently represent a monovalent hydrocarbon group, or the like. Rrepresents a monocyclic heterocyclic group together with the ester group and with the carbon atom. n is an integer of 1 to 6. Rrepresents a monovalent hydrocarbon group, or the like. Rrepresents a monovalent hydrocarbon group having 1 to 10 carbon atoms. Rand Reach independently represent a monovalent hydrocarbon group, or the like. Rand Reach independently represent a monovalent hydrocarbon group, or the like. 

Acid diffusion control agent, radiation-sensitive resin composition, resist pattern-forming method, compound, and production method

A photoresist composition containing (A) a polymer having a structural unit (I) that includes an acid-labile group, and (I) a compound represented by the following formula (1). In the following formula (1), R, R, Rand R represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. X represents a single bond, an oxygen atom or &#x2014;NR&#x2014;. Rrepresents a hydrogen atom, a hydroxy group or a monovalent organic group having 1 to 20 carbon atoms, and optionally taken together represents a ring structure by binding with R each other. Arepresents &#x2014;SOor &#x2014;CO. Mrepresents a monovalent onium cation. 

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Tokyo, Japan

Norihiko Ikeda