Tokyo Electron Limited

Norifumi Kohama

Kimio Motoda

Norio Wada

Takayuki Ishii

Yosuke Omori

Kenji Sugakawa

Nathan Ip

Satoshi Itoh

Soudai Emori

A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.

Substrate processing method, modification device and substrate processing system

A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.

Parameter adjustment method of bonding apparatus and bonding system

A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.

Plasma processing method and plasma processing apparatus

A substrate processing apparatus includes a holder having thereon an attraction surface configured to attract a substrate and including an outer attracting member configured to attract a peripheral portion of the substrate and an inner attracting member configured to attract a portion of the substrate inside the peripheral portion of the substrate attracted by the outer attracting member in a diametrical direction of the attraction surface; a moving device configured to move the outer attracting member with respect to the inner attracting member; and a controller configured to control a distortion, which is caused at the substrate attracted to the attraction surface, by controlling a movement of the outer attracting member with respect to the inner attracting member.

Substrate processing apparatus and substrate processing method

A local deformation which is generated on bonded substrates can be reduced. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit configured to attract and hold a second substrate from below; a striker configured to bring the first substrate into contact with the second substrate by pressing a central portion of the first substrate from above; a moving unit configured to move the second holding unit between a non-facing position where the second holding unit does not face the first holding unit and a facing position where the second holding unit faces the first holding unit; and a temperature control unit disposed to face the second holding unit placed at the non-facing position and configured to locally adjust a temperature of the second substrate attracted to and held by the second holding unit.

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Kumamoto, Japan

Norifumi Kohama