Tosoh Corporation

Sagami Chemical Research Center

Sagami Chemical Research Institute

Noriaki Oshima

Taishi Furukawa

Ken-ichi Tada

Tetsu Yamakawa

Hirokazu Chiba

Kazuhisa Kawano

Kenichi Sekimoto

Keiichiro Nishizawa

Koichiro Inaba

Toshiki Yamamoto

Mayumi Takamori

Hideki Oono

Tomoyuki Kinoshita

Kohei Iwanaga

Atsushi Maniwa

Tadahiro Yotsuya

Yosuke Takahashi

Yasuhiko Shida

Takahiro Kawabata

Toru Seita

Kazuyoshi Arai

Tetsuo Shibutami

Yoshinori Harada

Toshio Inase

Masaki Uchikura

Satori Hirai

Takashi Taniguchi

Sachio Asano

Shuji Kumagai

Hideki Ohno

Yousuke Takahashi

Reiko Otomo

Ken-Ichi Tada

A composition that includes a high-valent compound of copper, silver or indium; a linear, branched or cyclic Calcohol; and a Group VIII metal catalyst forms a metal film of copper, silver or indium on a substrate when the composition is coated on the substrate and heated to reduce the high-valent compound. The composition may alternatively include metal particles of silver, copper or indium in which the surface layer of the particle includes a high-valent compound of copper, silver or indium. A metal film of copper, silver or indium may also be formed on a substrate by coating a substrate with the composition including the metal particles, and heating to reduce the high-valent compound in the same manner as above.

Composition for production of metal film, method for producing metal film and method for producing metal powder

An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Film-forming material, group IV metal oxide film and vinylenediamide complex

A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein Rand Reach independently represent an alkyl group having 1-16 carbon atoms; Rand Reach independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and Rrepresents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Titanium complex, processes for producing the same, titanium-containing thin film, and process for producing the same

This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.

Ruthenium compound, method of producing the same, method of producing ruthenium-containing thin film using the same, and ruthenium-containing thin film

For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

Ruthenium complex mixture, method of producing the same, composition for film formation, ruthenium-containing film, and method of producing the same

Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M(NR)X(L)(2) and an alkali metal alkoxide (3): (wherein Mrepresents niobium atom or tantalum atom, Rrepresents an alkyl group having from 1 to 12 carbon atoms, Rrepresents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and Mrepresents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Imide complex, method for producing the same, metal-containing thin film and method for producing the same

A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M(NRR)(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; Rand Reach represents Calkyl, etc.; Rrepresents Calkyl, etc.; Rand Reach represents Calkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases). 

Metal-containing compound, its production method, metal-containing thin film, and its formation method

Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, Rand Rrepresent an alkyl group having from 1 to 6 carbon atoms. Rand Reach independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. Rand Reach independently represents an alkyl group having from 1 to 4 carbon atoms.).

Titanium complexes, their production methods, titanium-containing thin films, and their formation methods

A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.

Tantalum compound, method for producing same, tantalum-containing thin film and method for forming same

An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-based films using the organometallic compound are provided. The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-based film is prepared using the compound as a precursor. In the formulae, Rrepresents hydrogen atom or a lower alkyl group; Rrepresents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.

Organometallic iridium compound, process for producing the same and process for preparing film

An optical recording medium comprising at least a land and a groove where information-recording/reproducing is carried out by a flying type optical head, The optical recording medium keeps the flying height of the flying optical head constant in the entire region of the recording/reproducing area, and is provided with at least one characteristic among the following characteristics: RP which is dependent on land and groove parameters and the flying height satisfies the relation of H&#x3e;Rp 0.1 H; centerline mean roughness Ra is in the range of 0.2 nm Ra 2.0 nm, and the layer thickness of a liquid lubricant layer satisfies the relation of t Ra; the relation of &#x394;Rp&#x2266;&#x3bb;/16 NA which is dependent on the effective numerical aperature, laser wavelength and surface parameters is satisfied where all parameters in the formula are defined in the specification; and the height of a header area is different from the height of a land portion.

Optical recording medium

A novel bismuth compound having excellent vaporization characteristic and/or thermal stability, a process of producing the same and a process of producing a film in the film formation by the CVD process are disclosed. Bismuth compounds each represented by the following formula 1, 5 and 9, processes of producing the same, and processes of producing a film. In the formulae, Rand Reach represents a lower alkyl group; R, R, R, and Reach represents a lower alkyl group, a lower alkoxy group, or the like; m represents the number of the substituent Rin the range of 0-5; n, n, and nrespectively represent the number of the substituent R, the number of the substituent R, and the number of the substituent Reach in the range of 0-4; and Rto R, Rto R, R, and Reach represents hydrogen, a lower alkyl group, or the like, provided that specific combinations of the substituents are excluded.

Bismuth compound, process of producing the same, and process of producing a film

An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2):wherein Rrepresents hydrogen or a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded; Rrepresents a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.

Organometallic iridium compound, process of producing the same, and process of producing thin film

An optical recording medium with a circular body including a substrate, a recording layer and a dielectric layer on the substrate, the circular body having a recording/reproducing area and a hub attached to a surface of the circular body. When the circular body stands vertically, the recording/reproducing area of the hub-attached surface is curved in a convex form, and the flexural amount is from 5 &#x3bc;m to 100 &#x3bc;m.

Growing community of inventors

Yokohama, Japan

Noriaki Oshima