Olin Microelectronic Chemicals, Inc.

Arch Specialty Chemicals, Inc.

Ocg Microelectronic Materials, Inc.

Norbert Muenzel

Hans-Thomas Schacht

Carl-Lorenz Mertesdorf

Pasquale Alfred Falcigno

Manfred Hofmann

Heinz Holzwarth

Arnold Grubenmann

Hans-Jorg Kirner

Ottmar Rohde, Deceased

Ulrich Schadeli

Ulrich Schaedeli

Polymers having an average molecular weight M.sub.w (weight average) of 5,000 to 1,000,000 (measured by gel permeation chromatography), comprising structural repeating units of the formulae I-IV: ##STR1## in which R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, R.sub.7, R.sub.8, R.sub.9 and R.sub.10 and w, x, y, and z are defined herein, are suitable as binders for DUV photoresists of high processing stability and flow resistance.

Polymers for photoresist compositions

Photoresist compositions are described, which are sufficiently transparent in the solvent-free state for radiation of a wavelength of approximately 193 nm, and which contain nonaromatic chemical groups, which can be converted into groups with aromatic structural elements (latent aromatic groups) under process conditions, for which an image structure comprised of the resist material is not disrupted. A preferred component with latent aromatic groups is bicyclo[3.2.2]nona-6,8-dien-3-one. Resist coatings, which are produced with these compositions, show a stability in plasma etching, which is comparable with the stability of conventional resists based on phenolic resins.

Wet-chemical, developable, etch-stable photoresist for UV radiation with

Polymers having an average molecular weight M.sub.w (weight average) of 5,000 to 1,000,000 (measured by gel permeation chromatography), comprising structural repeating units of the formulae I-IV: ##STR1## in which R.sub.1, R.sub.2, R.sub.3 and R.sub.4 independently of one another are hydrogen, methyl or halogen, R.sub.5 and R.sub.6 independently of one another are C.sub.1 -C.sub.6 alkyl, R.sub.7, R.sub.8, R.sub.9 and R.sub.10 independently of one another are hydrogen, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 alkoxy or halogen, and w, x, y and z are numbers equal to or greater than 1, with the provision that the quotient ##EQU1## which is obtainable from the sum of the structural units having protecting groups divided by the sum of all of the structural units present, obeys the condition 0.10.ltoreq.Q.ltoreq.0.50, are suitable as binders for DUV photoresists of high processing stability and flow resistance.

Photoresist compositions

A polymer which is insoluble in aqueous-alkaline developer solutions, and comprises structural units of the formula (I): ##STR1## in which R.sub.2 is hydrogen, C.sub.1 -C.sub.18 alkyl, C.sub.5 -C.sub.10 cycloalkyl, C.sub.5 -C.sub.14 aryl, C.sub.6 -C.sub.30 aralkyl, R.sub.3 is C.sub.1 -C.sub.18 alkyl, C.sub.5 -C.sub.10 cycloalkyl, C.sub.5 -C.sub.14 aryl, or C.sub.6 -C.sub.30 aralkyl, it being possible for the alkyl, cycloalkyl, aryl, or aralkyl groups to be substituted if desired by one or more hydroxyl groups or nitro groups or by one or more halogen atoms, and X is a k+1 valent organic radical, k being a number from 1 to 5, and 1 is a number from 0 to 4, in a quantity such that the cleavage products obtained by reaction with an acid are soluble in aqueous-alkaline developer solutions, is suitable as a binder for DUV photoresists of high processing stability, high contrast, and good resolution.

Organic solvent soluble photoresists which are developable in aqueous

Radiation-sensitive compositions comprising a substance which forms acid under the action of actinic radiation and polymers based on combination of different repeating units derived from hydroxy styrene and hydroxy-vinylcyclohexane derivatives wherein a portion of the hydroxyl groups are replaced with either acid-labile acetal or ketal protecting groups and where a portion of the repeating groups comprise two crosslinked species connected via the protecting groups.

Crosslinked polymers

Photoresist compositions are described, which are sufficiently transparent in the solvent-free state for radiation of a wavelength of approximately 193 nm, and which contain nonaromatic chemical groups, which can be converted into groups with aromatic structural elements (latent aromatic groups) under process conditions, for which an image structure comprised of the resist material is not disrupted. A preferred component with latent aromatic groups is bicyclo�3.2.2!nona-6,8-dien-3-one Resist coatings, which are produced with these compositions, show a stability in plasma etching, which is comparable with the stability of conventional resists based on phenolic resins.

Wet-chemical developable, etch-stable photoresist for UV radiation with

Polymers based on combination of different repeating units derived from hydroxy styrene and hydroxyvinylcyclohexane derivatives wherein a portion of the hydroxyl groups are replaced with either acid-labile acetal or ketal protecting groups and where a portion of the repeating groups comprise two crosslinked species connected via the protecting groups.

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Heltersheim, Germany

Norbert Muenzel