Infineon Technologies Ag

Norbert Mais

Johann Gatterbauer

Hans-Joerg Timme

Dirk Meinhold

Wolfgang Lehnert

Bernhard Weidgans

Edmund Riedl

Reimund Engl

Michael Nelhiebel

Klaus Goller

Norbert Urbansky

Rainer Pelzer

Alfred Vater

Joerg Busch

Harry Walter Sax

Stephan Henneck

Verena Muhr

Katrin Albers

Marianne Kolitsch

A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.

Method of forming a layer structure, layer structure, method of forming a contact structure, method of forming a chip package, and chip package

A semiconductor device includes a structured interlayer on a substrate, a structured power metallization on the structured interlayer, and a barrier on the structured power metallization. The barrier is configured to prevent diffusion of at least one of water, water ions, sodium ions, potassium ions, chloride ions, fluoride ions, and sulphur ions towards the structured power metallization. A first defined edge of the structured interlayer faces the same direction as a first defined edge of the structured power metallization and extends beyond the first defined edge of the structured power metallization by at least 0.5 microns. The structured interlayer has a compressive residual stress at room temperature and the structured power metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer. The first defined edge of the structured power metallization has a sidewall which slopes inward.

Barrier for power metallization in semiconductor devices

In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line.

Protection layers for conductive pads and methods of formation thereof

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Munich, Germany

Norbert Mais