Fujitsu Corporation

Adv Antest Corporation

Nobuyuki Yasutake

Yasushi Takahashi

Hiroshi Yasuda

Hitoshi Tanaka

Akio Yamada

Yoshihisa Oae

Yoshihisa Ooae

Kazushi Ishida

Akiyoshi Tsuda

Kiichi Sakamoto

Hidefumi Yabara

Kenichi Kawashima

Toshitaka Tsuda

Hisayasu Nishino

Jun-ichi Kai

With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.

Method and system for charged particle beam exposure

Method for charged particle beam exposure with fixed barycenter through

When a pair of emitter-coupled transistor switches 22A and 22B are switched over, the D flipflop 26A shifts the base potential of a transistor buffer circuit 24 to reduce a potential fluctuation at a constant current source 21, reducing a current oscillation caused by the transient response of the constant current source 21 in which feedback control is performed by a comparator 214. In another construction, a potential oscillation waveform of the connected emitter node is stored in a RAM and the waveform read out of the RAM is added to the base of the transistor buffer circuit to reduce the current oscillation.

Differential current-switch circuit, D/A conversion circuit and method

A charged particle beam exposure apparatus employs a main deflector made of electromagnetic coils and a subdeflector made of electrostatic deflection electrodes. An exposure method used for this apparatus is capable of shortening a wait time of the main deflector. The main deflector deflects a charged particle beam in a direction X, while the subdeflector deflects the beam around the deflecting position of the main deflector to expose an object to the beam. An area to be exposed on the object is divided into thin subfields such that the width, in an X-axis direction of each subfield, is approximately 1/3 the length in a Y-axis direction of the same.

Method of and an apparatus for charged particle beam exposure

An electron beam exposure apparatus comprises an electron beam source, a holder for supporting a semiconductor substrate, a beam patterning part for patterning the electron beam, a beam focusing system for focusing the patterned electron beam on the semiconductor substrate, and a beam deflector system for deflecting the focused electron beam. The beam deflector comprises at least first, second and third coil assemblies connected in series for producing first through third magnetic fields respectively such that the first through third magnetic fields extend generally perpendicularly to the beam path of the electron beam at respective vertical levels on the beam path. The beam deflection means further comprises fourth and fifth coil assemblies for producing fourth and fifth magnetic fields respectively wherein the fourth coil assembly is disposed such that the fourth magnetic field extends generally parallel to the second magnetic field for correcting the second magnetic field and the fifth coil means is disposed such that the fifth magnetic field extends generally parallel to the third magnetic field for correcting the third magnetic field. Further, the electron beam exposing apparatus includes a driving system for energizing the beam deflector by driving the fourth and fifth coil assemblies independently from the first through third coils, so that the electron beam is deflected by a desired deflection angle and hits the semiconductor substrate substantially vertically at a desired location without the coma aberration.

Electron beam exposure apparatus

A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.

Mask for use in a charged particle beam apparatus including beam passing

A signal transmission circuit including a signal line through which the signal is transmitted from a signal source element to a signal receiving element, a grounding line arranged along the length of the signal line, and a high impedance element connected between the grounding line and the ground.

Signal transmission circuit

A D/A converter converting a digital signal having n bits (n is an integer) into an analog signal includes constant-current output circuits, provided for the n bits of the digital signal, for selectively generating n constant currents on the basis of the n bits of the digital signals. The n constant currents have mutually different current values with respect to the n bits of the digital signal. The constant-current output circuits have resistance elements respectively provided for the n bits of the digital signal. The resistance elements define the mutually different current values. The D/A converter also includes an output circuit for adding the n constant currents to each other and for outputting the analog signal based on an addition result, and a temperature-dependent voltage generating part for generating a temperature-dependent voltage which changes as a temperature around the D/A converter changes. Further, the D/A converter includes a current compensation part for generating a compensation voltage related to at least one of the resistance elements from the temperature-dependent voltage and for applying the compensation voltage to the one of the resistance elements. The compensation voltage compensates for a temperature-dependent variation in a characteristic of the one of the resistance elements.

Digital-to-analog converter having a circuit for compensating for

In an electron beam exposure system controlled by a computer, the system includes: an electron optical device for generating electron beams and irradiating the beams to a sample on a stage through a plurality of electron lens, a main deflection coil, and sub deflection electrodes, to form predetermined circuit patterns on the sample. The system also includes a position control device controlling the driving of the stage based on a stage position coordinate designated by the computer, detecting an actual stage position coordinate, and calculating an error value between the designated stage position coordinate and the actual stage position coordinate, the error value being divided into two components of an upper bits portion having an relatively large error value and a lower bits portion having a relatively small error value, and a deflection control device controlling the direction of the electron beams based on the main pattern data corrected by the upper bits portion and the sub pattern data corrected by the lower bits portion, and based on selected main and sub wait times determined by exposure and non-exposure timings.

Electron beam exposure system

A differential switching circuit includes a first current switching circuit having a first input terminal; a second current switching circuit having a second input terminal and a threshold different from that of the first circuit; and a constant current source commonly connected to the first and second circuits. Complementary input signals are applied to the first and second input terminals.

Device for complementary input signals using two circuits with different

An electron beam exposure apparatus includes an electromagnetic-type deflector for deflecting an electron beam in accordance with an analog signal corresponding to a digital signal which specifies an exposure region of a sample and an electrostatic-type deflector for deflecting the electron beam to a desired position in the exposure region. A difference signal representing the difference between the analog signal and a reference analog signal corresponding to the digital signal is taken out for compensating the amount of deflection of the electron beam in the electrostatic-type deflector.

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Tokyo, Japan

Nobuyuki Yasutake