Tokyo Electron Limited

Nobuyuki Okayama

Daisuke Hayashi

Jun Ozawa

Naoki Takayama

Shinji Muto

Chihiro Taguchi

Naoki Matsumoto

Akira Koshiishi

Jun Hirose

Nobuyuki Nagayama

Koichi Kazama

Hidehito Saegusa

Kazuki Moyama

Koichiro Inazawa

Jun Ooyabu

Yoshio Ishikawa

Masaaki Miyagawa

Hideaki Tanaka

Wataru Shimizu

Wataru Yoshikawa

Tomonori Miwa

Takashi Asakawa

Shuichiro Uda

Shunsuke Mizukami

Satoshi Yamada

Kazuto Takai

Kenji Sudou

Toshikatsu Wakaki

Norikazu Sugiyama

Shinji Fuchigami

Reika Ko

Masato Hiratsuka

Yasuhiro Otsuka

Hideki Sugiyama

A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

Manufacturing method of sample table

A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order.

Shower head, plasma processing apparatus and plasma processing method

A plasma etching apparatusincludes a mounting table that holds a semiconductor substrate W thereon; a first heaterthat heats a central region of the semiconductor substrate W held on the mounting table; a second heaterthat heats an edge region around the central region of the semiconductor substrate W held on the mounting table; a reactant gas supply unitthat supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table; and a control unitthat performs a plasma etching process on the semiconductor substrate W while controlling the first heaterand the second heaterto heat the central region and the edge region of the processing target substrate W held on the mounting tableto different temperatures.

Plasma etching apparatus and plasma etching method

A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

Focus ring and plasma processing apparatus

The susceptor of a plasma treating device, or the electrostatic chuck of a substrate table, is formed by ceramic thermal spray method. A thermally sprayed ceramic layer is pore-sealed by methacrylic resin. Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the thermally sprayed ceramic layer and then is cured to thereby fill pores between ceramic particles in the thermally sprayed ceramic layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

Substrate table, production method therefor and plasma treating device

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

Processing system

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

The susceptor () of a plasma treating device, or the electrostatic chuck () of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (A) is pore-sealed by methacrylic resin (D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

The present invention provides a process apparatus including an airtight process vessel, an exhaust system for exhausting gas from the process vessel, and a baffle plate for partitioning the process vessel into a process chamber for processing an object and an exhaust passage communicating with the exhaust system, the baffle plate has a plurality of slits through which the process chamber and the exhaust passage communicate with each other, and each of the slits has a tapered surface on an inner surface toward the process chamber, the tapered surface corresponding to not less than &frac14; of a depth of the slit.

Process apparatus

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

The present invention relates to a plasma etching method and a plasma etching apparatus, and more particularly to a plasma etching method and a plasma etching apparatus in which the selection ration is enhanced by improving trench side-wall protecting effect.

Growing community of inventors

Nirasaki, Japan

Nobuyuki Okayama