Canon Kabushiki Kaisha

Nobuyuki Kaji

Hisato Yabuta

Ryo Hayashi

Masafumi Sano

Ayanori Endo

Toru Den

Masato Ofuji

Takehiko Kawasaki

Norio Kaneko

Yasuyoshi Takai

Taihei Mukaide

Toshiaki Aiba

Katsumi Abe

Masatoshi Watanabe

Yoshinori Tateishi

Kazunori Fukuda

Naho Itagaki

Hideyuki Omura

Provided is a bottom gate type thin film transistor including on a substrate () a gate electrode (), a first insulating film () as a gate insulating film, an oxide semiconductor layer () as a channel layer, a second insulating film () as a protective layer, a source electrode (), and a drain electrode (), in which the oxide semiconductor layer () includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film () includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer () and contains therein 3.8&#xd7;10molecules/cmor more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus

Thin film transistor, method of manufacturing the same, and display apparatus

There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm&#xb1;15 nm.

Thin-film transistor and method of manufacturing same

An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below:&#x2267;0.94&#xd7;(7.1215.9415.675)/()&#x2003;&#x2003;(1)

Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device

An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.

X-ray detector and method for manufacturing the same

A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1&#xd7;10Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.

Production method of thin film transistor using amorphous oxide semiconductor film

A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.

Method for forming semiconductor film, method for forming semiconductor device and semiconductor device

A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

Method for manufacturing semiconductor device or apparatus, and apparatus for manufacturing the same

An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InGaZn, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below:&#x2267;0.94&#xd7;(7.1215.9415.675)/()&#x2003;&#x2003;(1)where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, and x+y+z&#x2260;0.

Amorphous oxide semiconductor, semiconductor device, and thin film transistor

A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.

Method for manufacturing thin film transistor using oxide semiconductor and display apparatus

A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

Method for manufacturing field-effect transistor

An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si.

Amorphous insulator film and thin-film transistor

A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

Method of fabricating oxide semiconductor device

Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.

Growing community of inventors

Kawasaki, Japan

Nobuyuki Kaji