Sumitomo Seika Chemicals Co., Ltd.

Japan Advanced Institute of Science and Technology

National Institute of Advanced Industrial Science and Technology

Other

Nec Corporation

University of Tsukuba

Tokyo University of Agriculture and Technology

Osaka Municipal Technical Research Institute

National University Corporation Kanazawa University

National University Corporation Tokyo University of Agriculture and Technology

Shigeki Hamamoto

Masato Fujikake

Morio Nakamura

Takao Okada

Nobutaka Fujimoto

Kiyoshi Nishioka

Tatsuya Shimoda

Satoshi Inoue

Shuichi Karashima

Tomoki Kawakita

Yuji Kinpara

Tetsuo Sakai

Takashi Mukai

Masahiro Suzuki

Junichi Fujishige

Koji Ueda

Masanori Morishita

Kazuhiro Fukada

Shigeyuki Iwasa

Koji Nakano

Hiroyuki Nishide

Kentaro Nakahara

Kenichi Oyaizu

Masami Nakamoto

Shun Hashimoto

Masafumi Okamoto

Mari Yamamoto

Toshinobu Ohno

Kimihiko Kondo

Yukiyasu Kashiwagi

Makoto Katou

Kazuyuki Miura

Junpei Kuwabara

Hikaru Yamada

Koh-Hei Nitta

Makiko Nakahara

Ryou Miyabara

Sosuke Yamaguchi

Takaki Kanbara

Nishioka Kiyoshi

Miho Mae

The etching maskfor screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching maskincluding aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel) which is not protected by the etching mask; and a heating step of, after the contact step, heating the oxide layer (the channel) and the etching maskto or above a temperature at which the etching maskis decomposed.

Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor

A thermally decomposable binder containing an aliphatic polycarbonate resin containing a constituting unit represented by the formula (1): wherein each of R, Rand R, which may be identical or different, is a hydrogen atom, an alkyl group having from 1 to 10 carbon atoms, or an aryl group having from 6 to 20 carbon atoms; and n is 1 or 2. The thermally decomposable binder and the fine inorganic particle-dispersed paste composition, each containing an aliphatic polycarbonate resin of the present invention can be used in general molded articles, optical materials such as films, fibers, optical fibers, and optical disks, thermally decomposable materials such as ceramic binders, and lost foam casting, medicinal materials such as drug capsules, additives for biodegradable resins, main components for biodegradable resins, and the like.

Thermally decomposable binder

It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.

Semiconductor device, method for producing same and aliphatic polycarbonate

An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.

Oxide precursor, oxide layer, semiconductor element, and electronic device, and method of producing oxide layer and method of producing semiconductor element

Intermediate semiconductor device having an aliphatic polycarbonate layer

This binder for use in a positive electrode for a lithium ion secondary battery contains a copolymer of both vinyl alcohol and an alkali-metal-neutralized ethylenically unsaturated carboxylic acid.

Binder for use in positive electrode for lithium ion secondary battery, positive electrode for lithium ion secondary battery containing said binder, lithium ion secondary battery using said positive electrode, and electrical machinery and apparatus

A negative electrode mixture for a nonaqueous electrolyte secondary cell according to the present invention includes: a negative electrode active material; a conductive assistant; and a binder. The binder contains a copolymer of vinyl alcohol and an alkali metal-neutralized product of ethylene-unsaturated carboxylic acid.

Negative-electrode mixture for non-aqueous electrolyte secondary cell, negative electrode for non-aqueous electrolyte secondary cell containing said mixture, non-aqueous electrolyte secondary cell provided with said negative electrode, and electrical device

A binder for an electric double-layer capacitor electrode according to the present invention includes a copolymer of vinyl alcohol and an alkali metal-neutralized product of ethylene-unsaturated carboxylic acid.

Binder for electric double-layer capacitor electrode, electric double-layer capacitor electrode comprising same binder, electric double-layer capacitor using same electrode, and electric apparatus

It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layerthat covers a gate electrode layerdisposed above a semiconductor layerwith a gate insulatorbeing interposed between the gate electrode layerand the semiconductor layer, and also covers the semiconductor layer, and has a dopant causing the semiconductor layerto become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layerand decomposition of the aliphatic polycarbonate layer

Semiconductor device having a decomposed aliphatic polycarbonate layer

The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device

This invention provides a polyolefin-based resin composition excellent in mechanical strength and elasticity. The polyolefin-based resin composition comprises a polyolefin-based resin, and, per 100 parts by mass of the polyolefin-based resin, 0.05 to 10 parts by mass of an aliphatic polycarbonate resin and 0.01 to 2 parts by mass of an acid modified polypropylene.

Polyolefin-based resin composition

The present invention provides a metal paste composition which can obtain the calcined bodies having low volume resistivity in a wiring substrate after calcining. More specifically, the present invention provides a metal paste composition comprising a metal, an aliphatic polycarbonate, and an organic solvent.

Metal paste composition

The present invention provides a radical composition capable of suppressing elution of electrode components in an electrolyte solution when used in an electrode for a secondary battery, and a battery using the radical composition. The present invention relates to a radical composition including a pyrroline nitroxide polymer and polyethylene glycols.

Radical composition and battery using same

A polymer dye has repeating units of formula (I): Each of R, R, and Ris independently a monocyclic carbocyclic group, a condensed polycyclic carbocyclic group, a monocyclic heterocyclic group, or a condensed polycyclic heterocyclic group. In any case, each of R, R, and Rindependently may have a substituent. Ris a divalent group, and Rand Rare monovalent groups. D is an organic dye group and n is an integer of from 0 to 10. The polymer dye has a number-average molecular weight of from 500 to 500,000. The dye can be a component in a film. The dye can also be included in various industrial materials in automobiles; communication instruments, such as mobile phones, PDA, remote controllers, mobile information terminals, electronic dictionaries, and electronic organizers; home electric appliances; construction parts; and the like.

Polymer dye

Growing community of inventors

Osaka, Japan

Nobutaka Fujimoto