Canon Kabushiki Kaisha

Other

Olympus Optical Company, Ltd.

Clarion Co

Fuji Photo Film Company, Limited

Kokusai Electric Co., Ltd.

Semiconductor Research Foundation

Nobuo Mikoshiba

Kazuo Tsubouchi

Kazuya Masu

Takao Okada

Shoichi Minagawa

Seizo Morita

Akira Yagi

Tadahiro Ohmi

Nobumasa Suzuki

Kazuyoshi Sugai

Takeshi Okamoto

Makoto Nagao

Toshihito Kouchi

Shuzo Mishima

Fumihide Ikeda

Junichi Murota

Shoichi Ono

Masao Sakuraba

Harushige Kurokawa

Tadashiro Ohmi

Kenji Wasa

Haruo Ogawa

Takeshi Tomioka

A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.

Process for forming deposited film by use of alkyl aluminum hydride

A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Chemical vapor deposition apparatus

A gas-feeding device for feeding a starting gas for deposition-film-formation by the chemical vapor deposition method, comprising a container having a space for discharging the starting gas containing an organometallic compound by introduction of a carrier gas; a gas-introducing means connected to the container for introducing a carrier gas is described. A plurality of openings for introducing the organometallic compound into the container is also provided, wherein each opening is part of an atomizer employing a piezoelectric element to eject the organometallic compound in a mist state into the container where the carrier gas passes through the space, and a container is provided for storing the organometallic compound.

Gas feeding device for controlled vaporization of an organanometallic

A gas-feeding device for feeding a starting gas for forming a deposited film by the chemical vapor deposition method, comprising a storage area for an organometallic compound having a high viscosity, wherein the storage area has a space for discharging a starting gas containing the organometallic compound by introducing a carrier gas into the storage area. The carrier gas is introduced into the organometallic gas via a gas-introducing member having a number of openings. An ultrasonic oscillator is provided in the storage area to generate cavitation in the organometallic compound. A deposited-film forming apparatus incorporating the gas-feeding device is also described.

Gas feeding device for controlled vaporization of an organometallic

Process for forming deposited film

A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

Vapor depositing method

A gas feeding device for feeding to a reaction vessel a starting gas for film formation by chemical vapor deposition. The gas feeding device is connected to a container which contains an organometallic compound, and has a plurality of gas introducing openings for introducing a carrier gas into the container for carrying vaporized organometallic compound into the reaction vessel. The gas feeding device includes an accelerating device which selects a carrier gas introducing route into the container through at least one of the plurality of gas introducing openings for accelerating the generation of the starting gas.

By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

Deposited film formation method utilizing selective deposition by use of

A scanning tunneling potentio-spectroscopic microscope, includes a conductive probe and a circuit for selectively applying one of first, second and third bias voltages to a sample. A tunnel current flowing between the probe and sample is detected, and a tunnel current signal is produced upon detection thereof. A servo circuit controls a distance between the probe and sample on the basis of the tunnel current signal by producing a servo signal as a feedback signal. A hold circuit switches the servo circuit between operating and non-operating states. Configuration data on a surface of the sample is obtained, on the basis of the servo signal, with the first bias voltage applied to the sample and with the servo circuit in the operating state. A first dependence of the tunnel current on the bias voltage is obtained, from the tunnel current signal and the second bias voltage, with the second bias voltage applied to the sample and with the servo circuit in the non-operating state. A second dependence of the tunnel current on the bias voltage is obtained from the tunnel current signal and the third bias voltage, with the third bias voltage applied to the sample and with the servo circuit in the non-operating state. Electron state data is obtained on the basis of the first dependence, and potential data is obtained on the basis of the first and second dependencies.

Scanning tunneling potentio-spectroscopic microscope and a data

A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al.

In forming a deposited film composed mainly of Al according to the CVD method utilizing gas of alkyl aluminum hydride, hydrogen gas, and if desired, further gas containing Si atoms, film formation is carried out by shifting the deposition rate from a low deposition rate to a high deposition rate. According to this method, excellent selectivity is exhibited and also a film excellent in flatness can be deposited at a high deposition rate.

Process for forming deposited film by use of alkyl aluminum hydride and

A spread spectrum receiving device using a correlator in an IF stage of the receiving device is disclosed, which is so constructed that interference wave or disturbing wave is removed by subjecting the interference wave or the disturbing wave and a desired spread spectrum signal to a signal processing in a stage preceding or succeeding a correlator to take out the desired spread spectrum signal.

Spread spectrum receiving device

A semiconductor element is disclosed, with which it is possible to obtain an area sufficiently large for evacuating heat and to have a high thermal conductivity so as to have an extremely high heat evacuation efficiency by using cooling fins having a microchannel structure.

Semiconductor element

A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.

Integrated circuit

A process for forming a Si-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing silicon and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Si-containing Al.

Growing community of inventors

Sendai, Japan

Nobuo Mikoshiba